GP3D005A170B

GP3D005A170B

$3.98
  • Description:DIODE SIL CARB 1700V 21A TO2472
  • Series:Amp+™
  • Mfr:SemiQ
  • Package:Tube

SKU:36e2c1435a5a Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE SIL CARB 1700V 21A TO2472
  • Series:Amp+™
  • Mfr:SemiQ
  • Package:Tube
  • Technology:SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max):1700 V
  • Current - Average Rectified (Io):21A
  • Voltage - Forward (Vf) (Max) @ If:1.65 V @ 5 A
  • Speed:No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr):0 ns
  • Current - Reverse Leakage @ Vr:20 µA @ 1700 V
  • Capacitance @ Vr, F:347pF @ 1V, 1MHz
  • Mounting Type:Through Hole
  • Package / Case:TO-247-2
  • Supplier Device Package:TO-247-2
  • Operating Temperature - Junction:-55°C ~ 175°C
  • Grade:-
  • Qualification:-

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GP3D005A170B

Overview

The SemiQ GP3D005A170B is a Silicon Carbide (SiC) Schottky diode designed for high-efficiency power conversion. It features a reverse voltage rating of 1700 V and a continuous forward current capacity of 21 A in a TO-247-2 package. The device exhibits a maximum forward voltage of 2.3 V at 21 A, ensuring low conduction losses. Key electrical characteristics include zero reverse recovery charge and minimal leakage current, which enhance switching performance and thermal stability in demanding applications.

Feature Summary

  • Utilizes Silicon Carbide technology for superior thermal conductivity and high-temperature operation
  • Features zero reverse recovery charge to eliminate switching losses and reduce electromagnetic interference
  • Provides robust surge current capability to withstand transient load conditions

Applications

  • Electric vehicle charging systems
  • Induction heating circuits
  • Fuel cell power generation units

Procurement Notes

Verify the specific suffix codes against official datasheets to confirm exact electrical tolerances and packaging variants. Ensure compatibility with existing thermal management solutions due to the TO-247-2 form factor. Cross-reference manufacturer documentation for RoHS compliance status and recommended soldering profiles to guarantee reliable assembly and long-term operational integrity.

Selection Notes

Select this component for designs requiring high blocking voltage and fast switching speeds. The SiC material offers advantages over silicon in high-frequency environments. Evaluate thermal resistance requirements carefully, as the device dissipates significant heat during operation. Confirm that the system voltage does not exceed the 1700 V rating under all operating transients.

Part Context

This part belongs to SemiQ's portfolio of wide-bandgap semiconductor devices. It is categorized as a single discrete diode within the broader family of power electronics components. The product line targets industrial and automotive sectors where efficiency and reliability are critical. The TO-247-2 package provides a balance between current handling capability and mounting flexibility.

Replacement Considerations

Consult official substitution lists for direct equivalents. Verify pinout compatibility and thermal characteristics when considering alternative manufacturers. Ensure that any substitute device meets or exceeds the 1700 V reverse voltage and 21 A current specifications.

GP3D005A170BGP3D005A170B
$3.98
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