GP3D006A065A

Overview

The GP3D006A065A is a silicon carbide Schottky diode manufactured by SemiQ, designed for high-efficiency power conversion applications. It features a single configuration housed in a TO-220-2L through-hole package. The device supports a maximum repetitive reverse voltage of 650 V and conducts a forward current of 20 A. Key electrical parameters include a forward voltage of 1.52 V at rated conditions and a low reverse leakage current of 3 uA. It withstands a forward surge current of 135 A and dissipates up to 176 W of power. The component operates reliably within a temperature range from -55 C to +175 C.

Feature Summary

• Utilizes silicon carbide technology to achieve near-zero switching losses for enhanced efficiency.
• Features a robust TO-220-2L through-hole package suitable for standard mounting techniques.
• Provides high thermal stability with an extended operating temperature range up to 175 C.

Applications

• High-frequency DC-DC converters
• Power factor correction circuits
• Uninterruptible power supplies

Procurement Notes

Verify the specific suffix 'A' against official SemiQ documentation to confirm pinout and mechanical dimensions match your design requirements. Ensure the procurement source provides valid traceability for this discrete semiconductor component. Cross-reference the datasheet revision date to guarantee compatibility with your system's thermal and electrical specifications before finalizing orders.

Selection Notes

Select this component when designing circuits requiring low reverse recovery charge and high-temperature resilience. The TO-220-2L package offers a balance of current handling and thermal management for moderate power levels. Compare the 650 V rating against peak transient voltages in your application to ensure adequate safety margins during operation.

Part Context

This part belongs to SemiQ's Gen 3 silicon carbide diode family, which emphasizes reduced switching losses compared to traditional silicon alternatives. The GP3D series is engineered for compact power designs where efficiency and thermal performance are critical constraints.

Replacement Considerations

Direct substitutes must match the 650 V rating, 20 A current capacity, and TO-220-2L footprint. Verify that alternative Schottky diodes maintain comparable forward voltage characteristics to preserve circuit efficiency.

FAQ

What is the maximum junction temperature for the GP3D006A065A?

The maximum operating temperature is specified as +175 C.

Does this diode exhibit significant reverse recovery charge?

No, the silicon carbide construction enables near-zero switching loss and minimal reverse recovery effects.