GP3D008A065A

Overview

The GP3D008A065A is a Silicon Carbide (SiC) Schottky diode manufactured by SemiQ. It features a single configuration in a TO-220-2 package designed for through-hole mounting. Key electrical parameters include a repetitive reverse voltage (Vrrm) of 650 V and a forward current (If) of 8 A. The device exhibits a typical forward voltage (Vf) of 1.45 V and a maximum reverse leakage current (Ir) of 3 µA. It supports a forward surge current (Ifsm) of 75 A and operates within a junction temperature range of -55 °C to +175 °C.

Feature Summary

• Utilizes Silicon Carbide material technology for enhanced thermal performance and high-temperature stability compared to traditional silicon devices.
• Features a Schottky barrier structure that eliminates reverse recovery charge, enabling faster switching speeds and reduced switching losses.
• Designed with a robust TO-220-2 through-hole package to facilitate efficient heat dissipation and reliable mechanical mounting in power circuits.

Applications

• High-frequency DC-DC converters
• Uninterruptible Power Supplies (UPS)
• Solar micro-inverters

Procurement Notes

Verify the specific suffix designation against the manufacturer's latest documentation to ensure correct binning or testing criteria. Confirm RoHS compliance status directly with the supplier or official datasheet before integration into regulated assemblies. Ensure the procurement channel provides traceability certificates if required for quality assurance protocols.

Selection Notes

Select this component when designing circuits requiring low forward voltage drop at moderate current levels up to 8 A. The 650 V rating suits applications operating below this threshold with appropriate safety margins. Consider the TO-220-2 package constraints for thermal management solutions and PCB layout requirements relative to higher-current alternatives in the same product family.

Part Context

This part belongs to SemiQ’s Gen 3 SiC Schottky Diode portfolio, which focuses on improving efficiency in power conversion systems. The GP3D series offers a balance between current handling capability and voltage blocking strength, targeting compact power designs where size and thermal performance are critical constraints.

Replacement Considerations

Direct pin-compatible replacements may include other 650V 8A TO-220-2 SiC diodes from different manufacturers, provided their forward voltage and thermal resistance specifications meet or exceed the original design requirements.

FAQ

What is the maximum operating junction temperature for the GP3D008A065A?

The maximum operating junction temperature is +175 °C.

Does this diode exhibit reverse recovery charge?

No, as a Schottky diode, it has negligible reverse recovery charge, resulting in minimal switching losses.