ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：DIODE SILICON CARBIDE
- Series：*
- Mfr：SemiQ
- Package：Tube
- Technology：-
- Voltage - DC Reverse (Vr) (Max)：-
- Current - Average Rectified (Io)：-
- Voltage - Forward (Vf) (Max) @ If：-
- Speed：-
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：-
- Capacitance @ Vr, F：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Operating Temperature - Junction：-
- Grade：-
- Qualification：-
Download product information
Overview
The GP3D010A065C is a Silicon Carbide (SiC) Schottky diode from the SemiQ series, designed for high-efficiency power conversion. It features a 650V reverse voltage rating and a 10A forward current capability. The device operates within a junction temperature range of -55°C to +175°C. Key electrical characteristics include zero reverse recovery current and fast, temperature-independent switching. It undergoes avalanche testing up to 29mJ and withstands test voltages exceeding 715V.
Feature Summary
- Zero reverse recovery current for minimal switching losses
- Fast, temperature-independent switching performance
- High avalanche energy capability tested to 29mJ
- Robust reverse voltage testing exceeding 715V
Applications
- Switching mode power supplies
- High-efficiency DC-DC converters
- Industrial power inversion systems
Procurement Notes
Verify the specific suffix 'C' against official datasheets to confirm package type and pinout configuration, as suffixes often denote mechanical variations. Confirm availability status, as this model may be subject to discontinuation or lifecycle changes. Ensure compatibility with existing thermal management designs given the wide operating temperature range.
Selection Notes
Select this component for applications requiring low reverse recovery charge and high-temperature reliability. The SiC technology offers superior efficiency compared to silicon counterparts in high-frequency switching environments. Consider the TO-247 or similar package constraints if screw-mount or through-hole integration is required for the target assembly.
Part Context
This part belongs to the SemiQ GP3D series of Silicon Carbide Schottky diodes. The series covers various voltage ratings from 600V to 1.7kV and current ratings from 5A to 400A. These devices are engineered for demanding power electronics applications where efficiency and thermal performance are critical.
Replacement Considerations
Direct substitutes may include other 650V 10A SiC Schottky diodes from manufacturers like Wolfspeed or ROHM. Verify that replacement parts match the zero-recovery characteristic and avalanche rating. Check for equivalent package dimensions and thermal resistance values to ensure fitment without redesign.
