ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：DIODE SIL CARB 650V 20A TO247-2
- Series：Amp+™
- Mfr：SemiQ
- Package：Tube
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：650 V
- Current - Average Rectified (Io)：20A
- Voltage - Forward (Vf) (Max) @ If：1.7 V @ 20 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：50 µA @ 650 V
- Capacitance @ Vr, F：835pF @ 1V, 1MHz
- Mounting Type：Through Hole
- Package / Case：TO-247-2
- Supplier Device Package：TO-247-2
- Operating Temperature - Junction：-55°C ~ 175°C
- Grade：-
- Qualification：-
Download product information
Overview
The GP3D020A065B is a Silicon Carbide (SiC) Schottky diode manufactured by SemiQ. It features a TO-247-2L package and supports a maximum repetitive peak reverse voltage of 650V with a forward current rating of 20A. The device operates within a junction temperature range of -55°C to 175°C. Designed for high-efficiency power conversion, it offers reduced heat sink requirements compared to traditional silicon alternatives.
Feature Summary
- Utilizes Silicon Carbide technology for superior thermal performance
- Schottky barrier construction minimizes switching losses
- High-temperature operation capability up to 175°C
Applications
- Uninterruptible Power Supplies (UPS)
- Inverter systems
- Automotive electronics
Procurement Notes
Verify the specific suffix 'B' corresponds to the TO-247-2L package variant when sourcing. Confirm that the ordering part number matches the official SemiQ datasheet specifications for the 650V/20A configuration. Ensure compatibility with existing PCB footprints designed for the TO-247-2L form factor before finalizing procurement orders.
Selection Notes
Select this component for applications requiring high-frequency switching and elevated thermal stability. The TO-247-2L package facilitates efficient mounting on heatsinks. Consider the 650V breakdown voltage and 20A continuous current limits to ensure adequate headroom for the target circuit design under worst-case operating conditions.
Part Context
This component belongs to the SemiQ GP series of discrete SiC Schottky diodes. It is distinct from other variants such as the GP3D020A065A, which utilizes a TO-220-2L package. The GP3D020A065B is specifically engineered for through-hole mounting in power modules where robust mechanical connection and thermal dissipation are critical.
Replacement Considerations
Direct substitutes include the GP3D020A065A if the TO-220-2L package is acceptable. Verify pinout compatibility and thermal resistance characteristics when replacing with components from other manufacturers offering similar 650V SiC Schottky specifications.
