SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The GP3D020A120U is a Silicon Carbide (SiC) Schottky diode array manufactured by SemiQ. It features a TO-247-3 through-hole package and contains one pair of common cathode diodes. The device supports a maximum repetitive reverse voltage of 1200 V and an average forward current of 20 A per diode. Key electrical characteristics include a typical forward voltage of 1.8 V at 10 A, a maximum reverse leakage current of 20 µA at 1200 V, and zero reverse recovery time. It operates within a junction temperature range of -55°C to +175°C.
Verify the specific suffix 'U' against the manufacturer's latest documentation to confirm the exact packaging type, as distributors may list variations such as tubes or cut tape. Confirm RoHS compliance status directly with the supplier, as regulatory declarations can change. Ensure the ordering quantity matches the manufacturer's standard packing unit to avoid potential handling fees or partial reel issues during fulfillment.
Select this component when a dual-diode solution is required in a compact through-hole footprint. The 1200V rating makes it suitable for high-voltage bus applications. Compare the 20A current rating against thermal management capabilities in the final assembly. Consider the low forward voltage drop for efficiency optimization in power conversion stages where conduction losses are critical.
This part belongs to SemiQ’s Amp+™ series of SiC Schottky diodes. It complements other components in the GP3D024A065U (650V) and GP2D020A120U (33A) families. These devices are designed to replace silicon fast-recovery diodes in high-efficiency power supplies, offering superior performance at elevated temperatures.
Direct pin-compatible replacements within the same family include the GP2D020A120U, which offers a higher current rating of 33A but requires verification of thermal derating curves. Lower voltage alternatives like the GP3D024A065U (650V) are not electrically equivalent for 1200V applications.