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The SemiQ GP3D020A170B is a 1700V Silicon Carbide Schottky diode in a TO-247-2L package. It features a continuous forward current of 20A and a repetitive peak reverse voltage of 1700V. The device exhibits zero reverse recovery charge, with a typical value of 203 nC. Avalanche tested to 600mJ at Tj=25°C, it supports a maximum junction temperature of 175°C and power dissipation up to 385W at TC=25°C.
Verify the specific suffix 'GP3D020A170B' against official SemiQ documentation to confirm exact electrical tolerances and packaging specifications. Ensure thermal management designs account for the specified junction temperature limits and power derating curves provided in the datasheet. Confirm RoHS compliance status directly with the manufacturer prior to final integration.
Select this component for high-frequency applications requiring minimal reverse recovery losses. Evaluate thermal resistance requirements based on the specified case temperatures. Consider the avalanche capability for circuits prone to inductive load switching. Verify that the TO-247-2L mounting torque aligns with the system's mechanical constraints.
This part belongs to the Amp+ series of silicon carbide devices from SemiQ. It serves as a direct replacement for the discontinued GP2D020A170B model. The product line focuses on high-efficiency power conversion components designed for demanding industrial and automotive environments.
The GP3D020A170B is documented as a direct substitute for the GP2D020A170B.
It is a unipolar rectifier featuring zero reverse recovery current.
Yes, parts are tested to withstand an avalanche energy of 600mJ starting at a junction temperature of 25°C.