GP3D020A170B

GP3D020A170B

$10.21
  • Description:DIODE SIL CARB 1700V 67A TO2472
  • Series:Amp+™
  • Mfr:SemiQ
  • Package:Tube

SKU:18fba51ffbac Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE SIL CARB 1700V 67A TO2472
  • Series:Amp+™
  • Mfr:SemiQ
  • Package:Tube
  • Technology:SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max):1700 V
  • Current - Average Rectified (Io):67A
  • Voltage - Forward (Vf) (Max) @ If:1.65 V @ 20 A
  • Speed:No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr):0 ns
  • Current - Reverse Leakage @ Vr:80 µA @ 1700 V
  • Capacitance @ Vr, F:1403pF @ 1V, 1MHz
  • Mounting Type:Through Hole
  • Package / Case:TO-247-2
  • Supplier Device Package:TO-247-2
  • Operating Temperature - Junction:-55°C ~ 175°C
  • Grade:-
  • Qualification:-

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GP3D020A170B

Overview

The SemiQ GP3D020A170B is a 1700V Silicon Carbide Schottky diode in a TO-247-2L package. It features a continuous forward current of 20A and a repetitive peak reverse voltage of 1700V. The device exhibits zero reverse recovery charge, with a typical value of 203 nC. Avalanche tested to 600mJ at Tj=25°C, it supports a maximum junction temperature of 175°C and power dissipation up to 385W at TC=25°C.

Feature Summary

  • Unipolar rectifier design with zero reverse recovery current for near-zero switching loss
  • Fast, temperature-independent switching characteristics
  • Avalanche ruggedness verified through testing to 600mJ energy absorption
  • Individual unit screening performed to greater than 1,870V breakdown

Applications

  • Switch mode power supplies
  • Uninterruptible power systems (UPS)
  • DC/DC converters
  • Solar inverters
  • Electric vehicle charging stations

Procurement Notes

Verify the specific suffix 'GP3D020A170B' against official SemiQ documentation to confirm exact electrical tolerances and packaging specifications. Ensure thermal management designs account for the specified junction temperature limits and power derating curves provided in the datasheet. Confirm RoHS compliance status directly with the manufacturer prior to final integration.

Selection Notes

Select this component for high-frequency applications requiring minimal reverse recovery losses. Evaluate thermal resistance requirements based on the specified case temperatures. Consider the avalanche capability for circuits prone to inductive load switching. Verify that the TO-247-2L mounting torque aligns with the system's mechanical constraints.

Part Context

This part belongs to the Amp+ series of silicon carbide devices from SemiQ. It serves as a direct replacement for the discontinued GP2D020A170B model. The product line focuses on high-efficiency power conversion components designed for demanding industrial and automotive environments.

Replacement Considerations

The GP3D020A170B is documented as a direct substitute for the GP2D020A170B.

FAQ

What is the reverse recovery characteristic of this diode?

It is a unipolar rectifier featuring zero reverse recovery current.

Is the device rated for avalanche operation?

Yes, parts are tested to withstand an avalanche energy of 600mJ starting at a junction temperature of 25°C.

GP3D020A170BGP3D020A170B
$10.21
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