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Product Detailed Parameters
- Description：DIODE ARRAY SIC 650V 12A TO247-3
- Series：Amp+™
- Mfr：SemiQ
- Package：Tube
- Diode Configuration：1 Pair Common Cathode
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：650 V
- Current - Average Rectified (Io) (per Diode)：12A
- Voltage - Forward (Vf) (Max) @ If：1.5 V @ 12 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：30 µA @ 650 V
- Operating Temperature - Junction：-55°C ~ 175°C
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The GP3D024A065U is a Silicon Carbide (SiC) Schottky diode array manufactured by SemiQ. It features a common cathode configuration with two diodes housed in a TO-247-3 through-hole package. The device supports a maximum DC reverse voltage of 650 V and an average rectified current of 12 A per diode. Forward voltage is specified at 1.5 V when conducting 12 A, while reverse leakage current remains at 30 µA under full reverse bias. Operating junction temperature ranges from -55°C to 175°C.
Feature Summary
- Utilizes Silicon Carbide Schottky technology for zero reverse recovery time operation
- Provides a dual common cathode configuration within a single TO-247-3 package
- Designed for high-temperature stability with a junction range extending to 175°C
Applications
- High-frequency power conversion circuits
- Uninterruptible Power Supply (UPS) systems
- Industrial motor drive inverters
Procurement Notes
Verify the specific manufacturer part number GP3D024A065U against official SemiQ documentation to confirm technical specifications. Ensure that the required TO-247-3 through-hole mounting style aligns with the target printed circuit board design. Confirm compliance with RoHS3 directives if environmental regulations apply to the final assembly process.
Selection Notes
Select this component when a dual-diode arrangement is required for synchronous rectification or freewheeling applications. The SiC material choice offers superior thermal performance compared to silicon alternatives. The TO-247-3 package facilitates effective heat dissipation for high-current operations up to 12 A per leg.
Part Context
This device belongs to the Amp+™ series of discrete semiconductors produced by SemiQ. The product line focuses on wide-bandgap materials to enhance efficiency in modern power electronics. The GP3D024 base identifier indicates a dual-diode architecture within this specific family classification.
FAQ
What is the reverse recovery time for this diode array?
The GP3D024A065U exhibits a reverse recovery time of 0 ns due to its Schottky barrier construction.
How is the internal diode configuration arranged?
The array consists of one pair of diodes connected in a common cathode configuration.
