ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：DIODE SIL CARB 650V 40A TO247-3
- Series：Amp+™
- Mfr：SemiQ
- Package：Tube
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：650 V
- Current - Average Rectified (Io)：40A
- Voltage - Forward (Vf) (Max) @ If：1.7 V @ 20 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：50 µA @ 650 V
- Capacitance @ Vr, F：835pF @ 1V, 1MHz
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Operating Temperature - Junction：-55°C ~ 175°C
- Grade：-
- Qualification：-
Download product information
Overview
The SemiQ GP3D040A065U is a 650V Silicon Carbide (SiC) Schottky diode in a TO-247-3L package. It features a continuous forward current of 40A and a repetitive peak reverse voltage of 650V. The device exhibits zero reverse recovery charge, near-zero switching loss, and fast temperature-independent switching. Avalanche tested to 135mJ, it ensures high reliability with parts tested above 715V. Key electrical parameters include a maximum junction temperature of 175°C, a typical thermal resistance of 0.88°C/W, and a total capacitive charge of 106nC.
Feature Summary
- Zero reverse recovery current for near-zero switching loss
- Fast, temperature-independent switching characteristics
- Avalanche ruggedness tested to 135mJ energy level
- Individual unit testing exceeding 715V breakdown voltage
Applications
- Switch mode power supplies
- Uninterruptible Power Supplies (UPS)
- Power factor correction circuits
- EV charging stations
- Output rectification
Procurement Notes
Verify the specific date code against datasheet revision 1.2 requirements, as forward voltage specifications are valid only for units manufactured after date code 2101. Confirm package dimensions match the TO-247-3L standard. Ensure thermal management designs account for the specified junction-to-case thermal resistance values at operating temperatures up to 175°C.
Selection Notes
Select this component for high-frequency applications requiring minimal switching losses and zero reverse recovery charge. The 650V rating and 40A continuous current capability suit medium-power conversion stages. Consider the 175°C max junction temperature for elevated thermal environments. Verify avalanche energy requirements do not exceed the 135mJ test limit under specified conditions.
Part Context
This part belongs to SemiQ's Amp+ series of Silicon Carbide Schottky diodes. It utilizes SiC technology to achieve superior performance compared to traditional silicon rectifiers. The TO-247-3L package facilitates efficient heat dissipation and easy parallel operation for higher current applications within power electronics systems.
Replacement Considerations
No public confirmed substitute part numbers are documented in the provided source material.
