GP3T016A120H

$10.94

Description：GEN3 1200V, 16M SIC MOSFET, TO-2
Series：QSiC™
Mfr：SemiQ
Package：Tube

SKU:f85ae19fd88f Category: Single FETs, MOSFETs Brand: SemiQ

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Product introduction

Product Detailed Parameters

Description：GEN3 1200V, 16M SIC MOSFET, TO-2
Series：QSiC™
Mfr：SemiQ
Package：Tube
FET Type：N-Channel
Technology：SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：132A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：18V
Rds On (Max) @ Id, Vgs：23mOhm @ 50A, 18V
Vgs(th) (Max) @ Id：4V @ 20mA
Gate Charge (Qg) (Max) @ Vgs：260 nC @ 18 V
Vgs (Max)：+22V, -8V
Input Capacitance (Ciss) (Max) @ Vds：6779 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：484W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-4
Package / Case：TO-247-4

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GP3T016A120H

Overview

The SemiQ GP3T016A120H is a QSiC™ 1200V Silicon Carbide MOSFET in a TO-247-4L package. It features a maximum drain-source voltage of 1200V, a continuous drain current of 95A at TC=25°C, and a typical on-resistance of 16mΩ. The device supports a junction temperature up to 175°C and includes a dedicated driver source pin for optimized gate driving.

Feature Summary

Includes a dedicated driver source pin to facilitate gate driving
Features avalanche testing capability up to 800mJ
Provides longer creepage distance within the package design

Applications

Solar inverters
Switch mode power supplies and UPS systems
Induction heating and welding equipment
EV charging stations
High voltage DC/DC converters
Motor drives

Procurement Notes

Verify the specific datasheet revision (Rev. 1.1) against the manufacturer's official documentation before finalizing designs. Confirm that the TO-247-4L package dimensions align with the target PCB footprint requirements. Ensure thermal management solutions support the specified junction temperature limits during operation.

Selection Notes

Select this component for high-efficiency applications requiring low switching losses and reliable body diode performance. Consider the 16mΩ on-resistance and 1200V rating when designing circuits for solar inverters or EV infrastructure. Verify compatibility with the recommended operational gate voltage range of -4.5V to +18V.

Part Context

This part belongs to the SemiQ QSiC™ series of silicon carbide MOSFETs. It utilizes a TO-247-4L package configuration designed for high-power density applications. The device is engineered to offer lower capacitance and improved system efficiency compared to traditional silicon alternatives.