GP3T020A120H

$10.00

Description：GEN3 1200V, 20M SIC MOSFET, TO-2
Series：QSiC™
Mfr：SemiQ
Package：Tube

SKU:6181dcb4a4ce Category: Single FETs, MOSFETs Brand: SemiQ

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Product introduction

Product Detailed Parameters

Description：GEN3 1200V, 20M SIC MOSFET, TO-2
Series：QSiC™
Mfr：SemiQ
Package：Tube
FET Type：N-Channel
Technology：SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：115A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：18V
Rds On (Max) @ Id, Vgs：25mOhm @ 40A, 18V
Vgs(th) (Max) @ Id：4V @ 20mA
Gate Charge (Qg) (Max) @ Vgs：234 nC @ 18 V
Vgs (Max)：+22V, -8V
Input Capacitance (Ciss) (Max) @ Vds：6078 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：429W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-4
Package / Case：TO-247-4

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GP3T020A120H

Overview

The GP3T020A120H is a QSiC™ 1200V SiC MOSFET in a TO-247-4L package. It features an 18 mΩ typical on-resistance and supports a continuous drain current of 115 A at 25°C case temperature. The device operates with a gate-source voltage range of -4.5 V to +18 V and withstands a pulsed drain current of 40 A. Thermal resistance from junction to case is typically 0.28 °C/W, with a maximum operating junction temperature of 175°C.

Feature Summary

Features a dedicated driver source pin to minimize parasitic inductance during switching transitions.
Includes avalanche testing up to 700 mJ for enhanced robustness under fault conditions.
All units are individually tested to exceed 1,400 V breakdown voltage for quality assurance.

Applications

Solar inverters
Switch mode power supplies and UPS systems
EV charging stations
High voltage DC/DC converters

Procurement Notes

Verify the specific revision level (Rev. 1.2) against your design requirements before ordering. Confirm that the TO-247-4L footprint matches your PCB layout, specifically noting the separate driver source pin configuration. Ensure thermal management solutions support the specified junction-to-case thermal resistance values for your intended power dissipation levels.

Selection Notes

Select this component when high-speed switching and low capacitance are required for system efficiency. The TO-247-4L package facilitates easy paralleling for higher current applications. Consider the 18 mΩ on-resistance for conduction loss calculations and verify that the gate drive circuitry accommodates the recommended -4.5 V to +18 V operational window.

Part Context

This part belongs to SemiQ's QSiC™ series of 1200V silicon carbide MOSFETs. The GP3T series utilizes advanced packaging to provide longer creepage distances and improved thermal performance compared to standard discrete packages. It is designed for high-voltage power conversion applications requiring reliable body diode characteristics.

Replacement Considerations

Direct substitutes within the same family include GP3T034A120H and GP3T040A120TS, though these have different on-resistance ratings and package types respectively. Verify pin compatibility and electrical parameters before swapping.

FAQ

What is the purpose of the fourth pin in the TO-247-4L package?

The fourth pin serves as a dedicated driver source connection, which helps reduce parasitic inductance in the gate loop for faster and more stable switching.