GPA025A120MN-ND

Description：IGBT NPT/TRENCH 1200V 50A TO-3PN
Series：-

SKU:e039909dce89 Category: Single IGBTs Brand: SemiQ

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：IGBT NPT/TRENCH 1200V 50A TO-3PN
Series：-
Mfr：SemiQ
Package：Tube
IGBT Type：NPT and Trench
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：50 A
Current - Collector Pulsed (Icm)：75 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 25A
Power - Max：312 W
Switching Energy：4.15mJ (on), 870µJ (off)
Input Type：Standard
Gate Charge：350 nC
Td (on/off) @ 25°C：57ns/240ns
Test Condition：600V, 25A, 10Ohm, 15V
Reverse Recovery Time (trr)：480 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-3P-3, SC-65-3
Supplier Device Package：TO-3PN
Grade：-
Qualification：-

Download product information

GPA025A120MN-ND

Overview

The GPA025A120MN-ND is a high-power Insulated-Gate Bipolar Transistor (IGBT) manufactured by SemiQ. It features a collector-emitter breakdown voltage of 1200 V and a maximum continuous collector current of 25 A. The device utilizes NPT and Trench technology for efficient switching performance. It is housed in a TO-3PN package, designed for through-hole mounting. The component is classified as obsolete with a tube packaging type. It operates within standard industrial temperature ranges suitable for power electronics applications requiring robust voltage handling.

Feature Summary

NPT and Trench IGBT technology for optimized switching characteristics
High voltage blocking capability at 1200 V
Through-hole TO-3PN package design

Applications

Industrial motor drives
Power conversion systems
Inverter circuits

Procurement Notes

This part number is listed as obsolete. Verify availability through secondary market channels or authorized distributors holding remaining stock. Confirm compatibility with existing PCB layouts due to the TO-3PN form factor. Check for end-of-life notices from SemiQ to plan for long-term supply chain stability and potential redesign requirements.

Selection Notes

Select this component only if legacy system compatibility with the TO-3PN package is required. Ensure thermal management solutions support the specific power dissipation limits of the 25 A rating. Compare against modern alternatives if new designs are permitted, as newer packages may offer improved thermal performance and availability.

Part Context

SemiQ produces discrete semiconductors including MOSFETs and IGBTs. The GPA series represents their insulated-gate bipolar transistor lineup. This specific model belongs to the broader category of power transistors used in medium-power switching applications. The manufacturer focuses on standardized packages like TO-220 and TO-247, though this unit uses the distinct TO-3PN style.