GPA030A135MN-FDR

GPA030A135MN-FDR

  • Description:IGBT TRENCH FS 1350V 60A TO-3PN
  • Series:-

SKU:6b4affe259dd Category: Brand:

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Product Detailed Parameters

  • Description:IGBT TRENCH FS 1350V 60A TO-3PN
  • Series:-
  • Mfr:SemiQ
  • Package:Tube
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):1350 V
  • Current - Collector (Ic) (Max):60 A
  • Current - Collector Pulsed (Icm):90 A
  • Vce(on) (Max) @ Vge, Ic:2.4V @ 15V, 30A
  • Power - Max:329 W
  • Switching Energy:4.4mJ (on), 1.18mJ (off)
  • Input Type:Standard
  • Gate Charge:300 nC
  • Td (on/off) @ 25°C:30ns/145ns
  • Test Condition:600V, 30A, 5Ohm, 15V
  • Reverse Recovery Time (trr):450 ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-3P-3, SC-65-3
  • Supplier Device Package:TO-3PN
  • Grade:-
  • Qualification:-

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GPA030A135MN-FDR

Overview

The GPA030A135MN-FDR is a single IGBT from SemiQ, housed in a TO-3PN (TO3PN) package. It features a maximum collector-emitter breakdown voltage of 1350V and a continuous collector current rating of 60A. The device has a power dissipation capacity of 329W. It operates with a gate-emitter voltage of 15V and exhibits a collector-emitter saturation voltage of 2.4V at the specified current conditions.

Feature Summary

  • Single IGBT configuration for discrete switching applications
  • High voltage blocking capability suitable for industrial power systems
  • Robust thermal performance within a standard TO-3PN leaded package

Applications

  • Industrial motor drives
  • Inverter circuits
  • Power supply units

Procurement Notes

Verify the exact datasheet version and electrical characteristics directly from SemiQ official documentation before integration. Confirm that the TO-3PN package dimensions match your PCB or heatsink design requirements. Ensure the gate drive circuitry supports the specified 15V gate-emitter voltage level to guarantee proper switching operation and avoid device damage.

Selection Notes

Select this component when a high-voltage, medium-current single IGBT is required for robust power switching. The TO-3PN package offers reliable thermal management for moderate power levels. Consider the 1350V rating for safety margins in higher voltage DC bus applications. Evaluate the 2.4V saturation voltage against system efficiency targets.

Part Context

This part belongs to SemiQ's discrete IGBT lineup, designed for general-purpose power electronics. The GPA series typically targets applications requiring reliable switching with standard packaging. The TO-3PN form factor allows for easy mounting on heatsinks using standard hardware, facilitating integration into existing industrial power modules and converter designs.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material. Cross-reference with other manufacturers offering 1350V, 60A IGBTs in TO-3PN packages only after verifying all electrical parameters and thermal characteristics against the original specifications.

GPA030A135MN-FDRGPA030A135MN-FDR

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