GPI65008DF56

Single FETs, MOSFETs Overview

The GPI65008DF56 is an N-channel 650V GaN Power HEMT in a 5x6 DFN package. It features a typical Rdson of 170 mΩ, Ids of 8A, and Qg of 2.1 nC. The device has a BVdss of 650V, Ciss of 63 pF, and zero reverse recovery charge (Qrr). Absolute maximum ratings include VDS-max of 800V, VGS-max of -12 to +7.5V, and TJ-max of 150°C.

Single FETs, MOSFETs Feature Summary

• Ultra-low on-state resistance for superior power density
• Extremely low input capacitance enabling ultra-high switching frequency
• Zero reverse recovery charge eliminating body diode issues
• Outstanding switching performance with high dv/dt capability

Single FETs, MOSFETs Applications

• Switching power applications
• Adapters
• Quick chargers

Single FETs, MOSFETs Procurement Notes

Verify the datasheet version matches your design requirements. Confirm that the specific tape and reel packaging quantity aligns with your manufacturing line setup. Ensure gate drive circuits accommodate the unique voltage thresholds and high slew rates inherent to this E-mode GaN technology.

Single FETs, MOSFETs Selection Notes

Select this component when high efficiency at elevated frequencies is critical. The low Qg minimizes gate drive losses. Consider the 5x6 DFN package for thermal management via the bottom-cooled pad. Verify PCB layout capabilities to handle the high dv/dt without parasitic oscillations.

Single FETs, MOSFETs Part Context

This part belongs to the GaNPower International Inc. lineup of E-mode GaN HEMTs built on silicon. Unlike traditional silicon MOSFETs, these devices lack an intrinsic PN junction body diode, allowing operation in both first and third quadrants without external freewheeling diodes.

Single FETs, MOSFETs Replacement Considerations

GaN HEMTs are not direct pin-to-pin replacements for silicon MOSFETs or IGBTs due to different gate driving voltage requirements and extremely high dv/dt slew rates. Specialized drivers and optimized PCB layouts are necessary to manage circuit parasitics effectively.

Single FETs, MOSFETs FAQ

Do I need to parallel a Freewheeling Recovery Diode (FRD) with this device?

No. GaN HEMTs have no inherent PN junction diodes causing reverse recovery issues. They can operate in both first and third quadrants, though dead time power loss should be managed due to the Vsd voltage.

Can this device be paralleled with other GaN HEMTs?

Yes. GaN HEMTs are ideal for paralleling because they exhibit a positive temperature coefficient of Rdson and a slightly positive temperature coefficient of threshold voltage.