GPI90005DF88

Description：GaNFET N-CH 900V 5A DFN8x8
Series：-
Mfr：GaNPower
Package：Tape & Reel (TR)

SKU:87c93dbcd8a9 Category: Single FETs, MOSFETs Brand: GaNPower

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Product introduction

GPI90005DF88 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists GaNPower. Its product description is GaNFET N-CH 900V 5A DFN8x8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for GPI90005DF88

Description：GaNFET N-CH 900V 5A DFN8x8
Series：-
Mfr：GaNPower
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：900 V
Current - Continuous Drain (Id) @ 25°C：5A
Drive Voltage (Max Rds On, Min Rds On)：6V
Rds On (Max) @ Id, Vgs：320mOhm @ 1A, 6V
Vgs(th) (Max) @ Id：1.3V @ 3.5mA
Gate Charge (Qg) (Max) @ Vgs：1.6 nC @ 6 V
Vgs (Max)：+7.5V, -12V
Input Capacitance (Ciss) (Max) @ Vds：39 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-DFN (8x8)
Package / Case：8-DFN

Single FETs, MOSFETs datasheet and documents for GPI90005DF88

GPI90005DF88

Single FETs, MOSFETs Overview

The GPI90005DF88 is an N-channel 900V GaN HEMT in a DFN 8x8 package. It features a typical RDS(on) of 235 mΩ at VGS=6V, Id=1A, and TJ=25°C. The device supports a continuous DC drain current of 5 A and a pulse current of 11 A. Key electrical parameters include a gate charge (Qg) of 1.6 nC, input capacitance (CISS) of 39 pF, and zero reverse recovery charge (Qrr). Maximum ratings specify a breakdown voltage of 900 V, a maximum junction temperature of 150°C, and a thermal resistance from junction to case of 1.4 °C/W.

Single FETs, MOSFETs Feature Summary

Ultra-low on-state resistance for superior power density
Extremely low input capacitance and zero reverse recovery charge
High dv/dt capability with outstanding switching performance

Single FETs, MOSFETs Applications

Switching Power Applications
Server and Telecom Power Application
EVOBC and DC-DC Converters
UPS, Inverters, PV

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet version against the manufacturer's official documentation before integration. Confirm that the DFN 8x8 packaging method aligns with your assembly capabilities. Ensure all static and dynamic parameter limits are strictly observed during design to maintain reliability and safety standards.

Single FETs, MOSFETs Selection Notes

Select this component when high switching frequency and efficiency are required. The low Qg and CISS values support fast transitions. Verify that the 900V rating meets system voltage requirements. Consider the 150°C max junction temperature for thermal management strategies in compact designs.

Single FETs, MOSFETs Part Context

This device utilizes proprietary E-mode GaN on silicon technology. It is designed as a power switch for high-frequency applications. The DFN 8x8 package provides a low-profile form factor suitable for space-constrained electronics requiring high power density.