GSBC846BDW

Overview

The GSBC846BDW is a dual NPN transistor manufactured by Good-Ark Semiconductor, housed in an SOT-363 surface-mount package. It features two independent NPN transistors within a single compact unit. Key electrical parameters include a collector-base voltage (VCBO) of 80 V, a collector-emitter voltage (VCEO) of 65 V, and an emitter-base voltage (VEBO) of 6 V. The maximum continuous collector current (IC) is rated at 100 mA, with a peak collector current (ICM) of 200 mA. Total power dissipation (Ptot) is specified as 250 mW. The device exhibits a DC current gain (hFE) ranging from 200 to 450 under standard test conditions.

Feature Summary

• Integrates two NPN transistors into one small outline plastic package for space efficiency
• Provides high stability and reliability through robust semiconductor construction
• Features closely matched electrical characteristics between the internal transistor pairs

Applications

• General-purpose switching circuits requiring dual NPN functionality
• Amplification stages in low-power electronic devices
• Digital logic interface applications utilizing matched transistor pairs

Procurement Notes

Verify the specific ordering suffix and packaging quantity against the manufacturer's official documentation before procurement. Confirm that the SOT-363 footprint matches the target PCB layout dimensions. Ensure compliance with RoHS standards if required by the end application. Cross-reference the datasheet revision date to confirm parameter validity.

Selection Notes

Select this component when a dual NPN configuration is required in a minimal footprint. Compare the 250 mW total power dissipation limit against thermal constraints. Verify that the 65 V collector-emitter voltage rating exceeds the maximum circuit operating voltage. Consider the hFE range of 200–450 for biasing calculations in amplification designs.

Part Context

This component belongs to the general-purpose dual NPN transistor category. It serves as a compact alternative to using two separate single transistors. The SOT-363 package allows for automated surface-mount assembly. It complements other dual-transistor families designed for space-constrained printed circuit board layouts.

Replacement Considerations

Check pinout compatibility with existing SOT-363 dual NPN designs. Verify that replacement parts meet or exceed the 80 V VCBO and 65 V VCEO ratings. Ensure the replacement device supports the required 100 mA collector current and 250 mW power dissipation limits.