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The GSBC847BV is a dual NPN bipolar junction transistor manufactured by Good-Ark Semiconductor. It utilizes epitaxial die construction and is housed in an ultra-small SOT-563 surface mount package. The device features a collector-base voltage of 50V, a collector-emitter voltage of 45V, and an emitter-base voltage of 6V. Maximum continuous collector current is rated at 100mA with a total power dissipation of 150mW. DC current gain ranges from 200 to 450 depending on test conditions. The transition frequency is 100MHz, and the collector output capacitance is 4.5pF. Operating junction temperature spans -55°C to +150°C.
Verify component authenticity through official Good-Ark Semiconductor channels or authorized distributors. Confirm RoHS compliance status and check for specific manufacturing date codes relevant to production timelines. Ensure packaging specifications match required reel quantities for automated assembly lines.
Select this component when space constraints require dual NPN functionality in a compact footprint. Consider the 150mW power dissipation limit and thermal resistance characteristics for circuit design. Verify that the 45V collector-emitter voltage rating meets the operational requirements of the target application environment.
This part belongs to the BC847 series of small signal transistors. It serves as a complementary counterpart to PNP variants like the BC857 series. The SOT-563 package allows for reduced board space compared to discrete components, supporting cost-effective pick-and-place manufacturing processes.
Compatible substitutes include Diodes Incorporated BC847BVC-7 and Nexperia BC847BV. Verify pinout compatibility and electrical parameter alignment before substitution.