GSFK0501E

FET, MOSFET Arrays Overview

The GSFK0501E is a dual P-channel MOSFET in an SOT-363 package. It features a drain-source voltage of -50 V and a continuous drain current of -0.18 A at 25°C. The on-resistance is typically 2.6 Ω at -10 V gate drive and 3.2 Ω at -4.5 V. Total gate charge is 0.53 nC, with input capacitance of 25.2 pF. Power dissipation reaches 0.3 W at 25°C, dropping to 0.24 W at 70°C. Thermal resistance junction-to-ambient is 400 °C/W. Operating temperature ranges from -50°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual configuration integrating two independent P-channel MOSFETs within a single compact surface-mount package.
• Advanced process technology designed for high cell density and low on-resistance to improve efficiency.
• Fast switching capabilities combined with reverse body recovery characteristics suitable for demanding applications.

FET, MOSFET Arrays Applications

• High efficiency switched mode power supplies
• Low voltage DC/DC converters
• Battery protection circuits

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official distributor catalogs to confirm packaging quantity and reel specifications. Ensure the component meets RoHS compliance requirements as stated in the manufacturer documentation. Cross-reference the part number with the latest datasheet revision to confirm electrical parameters match design specifications before procurement.

FET, MOSFET Arrays Selection Notes

Select this component for space-constrained designs requiring dual P-channel functionality. Evaluate thermal management needs due to the high junction-to-ambient thermal resistance. Confirm that the gate drive voltage provides sufficient overdrive to achieve the specified low on-resistance values for optimal performance.

FET, MOSFET Arrays Part Context

Good-Ark Semiconductor manufactures discrete semiconductors including MOSFETs and diodes. The GSFK0501E belongs to their dual MOSFET portfolio, utilizing advanced processing techniques. This device targets applications where board space is limited but multiple switching elements are required.

FET, MOSFET Arrays Replacement Considerations

Check for pin-compatible alternatives in the SOT-363 package with similar -50V ratings. Verify that substitute parts meet or exceed the required on-resistance and gate charge specifications for equivalent switching performance.

FET, MOSFET Arrays FAQ

What is the maximum continuous drain current for the GSFK0501E?

The maximum continuous drain current is -0.18 A at an ambient temperature of 25°C.

Does the GSFK0501E contain integrated body diodes?

Yes, each P-channel MOSFET element includes a reverse body diode with a forward voltage of up to -1.2 V at -0.1 A source-drain current.

What is the typical gate threshold voltage range?

The gate threshold voltage typically ranges from -1.0 V to -3.0 V when tested at a drain current of -250 µA.