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GSFL65R900 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Good-Ark Semiconductor. Its product description is MOSFET, N-CH, SINGLE, 5.00A, 650. Review the specifications below when checking this part for your BOM.
The GSFL65R900 is a 650V N-Channel MOSFET manufactured by Good-Ark Semiconductor, designed for high-efficiency switched mode power supplies. It features an advanced process technology achieving low on-resistance and gate charge. Key electrical parameters include a drain-source voltage of 650V, continuous drain current of 5A at 25°C, and typical RDS(ON) of 0.78Ω at VGS=10V. The device operates within a junction temperature range of -55 to +150°C and utilizes a SOT-223 package.
Verify the specific ordering suffix L65R900 corresponds to the Tape & Reel packaging configuration containing 3,000 pieces per reel. Confirm that the component marking matches the datasheet specifications. Ensure compatibility with the SOT-223 footprint dimensions provided in the package outline section before finalizing procurement orders.
Select this component when a 650V rating is required for compact power supply designs. The SOT-223 package offers a balance between thermal performance and board space constraints. Consider the 0.78Ω typical on-resistance for conduction loss calculations and verify gate drive requirements against the 13nC total gate charge specification for optimal switching speed.
This part belongs to Good-Ark Semiconductor's discrete semiconductor product line, specifically focusing on N-Channel MOSFETs. The manufacturer specializes in surface mount devices utilizing advanced process technologies to deliver superior quality and reliability for global electronic manufacturing applications.
No public confirmed substitute part numbers are available in the source documentation.
The maximum single pulse avalanche energy is 214 mJ, tested under conditions of L=79mH, VDD=100V, RG=25Ω, and starting temperature TJ=25°C.
The reverse recovery time is typically 334 ns, measured at IS=5A, VGS=0V, and dIF/dt=100A/us.
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