Single FETs, MOSFETs GSFL65R900 product image

GSFL65R900

$1.06
  • Description:MOSFET, N-CH, SINGLE, 5.00A, 650
  • Series:-
  • Mfr:Good-Ark Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:9373b6afbb45 Category: Brand:

  
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GSFL65R900 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Good-Ark Semiconductor. Its product description is MOSFET, N-CH, SINGLE, 5.00A, 650. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for GSFL65R900

  • Description:MOSFET, N-CH, SINGLE, 5.00A, 650
  • Series:-
  • Mfr:Good-Ark Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):650 V
  • Current - Continuous Drain (Id) @ 25°C:5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:900mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:300 pF @ 100 V
  • FET Feature:-
  • Power Dissipation (Max):20W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-223
  • Package / Case:TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for GSFL65R900

GSFL65R900

Single FETs, MOSFETs Overview

The GSFL65R900 is a 650V N-Channel MOSFET manufactured by Good-Ark Semiconductor, designed for high-efficiency switched mode power supplies. It features an advanced process technology achieving low on-resistance and gate charge. Key electrical parameters include a drain-source voltage of 650V, continuous drain current of 5A at 25°C, and typical RDS(ON) of 0.78Ω at VGS=10V. The device operates within a junction temperature range of -55 to +150°C and utilizes a SOT-223 package.

Single FETs, MOSFETs Feature Summary

  • Advanced MOSFET process technology for high cell density
  • Low on-resistance combined with low gate charge
  • Fast switching capability with reverse body recovery
  • High dv/dt ruggedness

Single FETs, MOSFETs Applications

  • High efficiency switched mode power supplies
  • General purpose power switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix L65R900 corresponds to the Tape & Reel packaging configuration containing 3,000 pieces per reel. Confirm that the component marking matches the datasheet specifications. Ensure compatibility with the SOT-223 footprint dimensions provided in the package outline section before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a 650V rating is required for compact power supply designs. The SOT-223 package offers a balance between thermal performance and board space constraints. Consider the 0.78Ω typical on-resistance for conduction loss calculations and verify gate drive requirements against the 13nC total gate charge specification for optimal switching speed.

Single FETs, MOSFETs Part Context

This part belongs to Good-Ark Semiconductor's discrete semiconductor product line, specifically focusing on N-Channel MOSFETs. The manufacturer specializes in surface mount devices utilizing advanced process technologies to deliver superior quality and reliability for global electronic manufacturing applications.

Single FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are available in the source documentation.

Single FETs, MOSFETs FAQ

What is the maximum single pulse avalanche energy (EAS) for the GSFL65R900?

The maximum single pulse avalanche energy is 214 mJ, tested under conditions of L=79mH, VDD=100V, RG=25Ω, and starting temperature TJ=25°C.

What is the reverse recovery time (Trr) of the body diode?

The reverse recovery time is typically 334 ns, measured at IS=5A, VGS=0V, and dIF/dt=100A/us.

GSFL65R900GSFL65R900
$1.06
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