GSFP34010

FET, MOSFET Arrays Overview

The GSFP34010 is a 100V N-Channel MOSFET manufactured by Good-Ark Semiconductor. It features a maximum drain-source voltage of 100V and a continuous drain current of 20A at 25°C case temperature. The device exhibits a typical on-resistance of 26mΩ and a maximum of 34mΩ at VGS=10V and ID=10A. Key electrical parameters include a gate threshold voltage range of 1.1V to 2.8V, total gate charge of 16nC, and reverse recovery time of 34ns. Power dissipation reaches 19W at 25°C with a junction-to-case thermal resistance of 6.58°C/W.

FET, MOSFET Arrays Feature Summary

• Utilizes advanced MOSFET process technology for high cell density
• Optimized for low on-resistance combined with low gate charge
• Designed for fast switching and reverse body recovery performance

FET, MOSFET Arrays Applications

• High efficiency switched mode power supplies
• General purpose power management circuits

FET, MOSFET Arrays Procurement Notes

Verify the specific package marking and date code against the manufacturer's latest documentation before integration. Confirm that the thermal design accounts for the specified junction-to-case resistance under actual operating conditions. Ensure the gate drive voltage aligns with the absolute maximum ratings to prevent dielectric breakdown.

FET, MOSFET Arrays Selection Notes

Select this component when a 100V rating and 20A continuous current capability are required in a compact surface mount form factor. Consider the 34mΩ on-resistance limit for conduction loss calculations. Evaluate the thermal environment to ensure the 19W dissipation rating remains within safe operating limits during steady-state operation.

FET, MOSFET Arrays Part Context

This part belongs to the Good-Ark Semiconductor discrete semiconductor portfolio, specifically within their N-Channel MOSFET category. The device is designed using modern planar trench technology to balance conduction losses and switching speeds. It serves as a solid-state switch alternative to mechanical relays or bipolar transistors in low-voltage DC applications.

FET, MOSFET Arrays Replacement Considerations

Cross-reference pinout compatibility and thermal resistance values when substituting. Verify that any alternative device meets the 100V drain-source voltage requirement and maintains similar gate charge characteristics for equivalent switching performance.

FET, MOSFET Arrays FAQ

What is the maximum pulsed drain current for the GSFP34010?

The maximum pulsed drain current is 80A at a case temperature of 25°C.

How does the on-resistance vary with junction temperature?

The on-resistance increases as the junction temperature rises, following the normalized curve provided in the datasheet specifications.

What is the reverse recovery charge of the internal body diode?

The reverse recovery charge is typically 37nC under test conditions of IS=10A, VGS=0V, VR=50V, and dIF/dt=100A/us.