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GSFPB0976 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Good-Ark Semiconductor. Its product description is MOSFET, N-CH, SINGLE, 80.00A, 10. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for GSFPB0976
- Description：MOSFET, N-CH, SINGLE, 80.00A, 10
- Series：-
- Mfr：Good-Ark Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：8mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：47 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2780 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：125W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-PPAK (5.1x5.71)
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for GSFPB0976
Single FETs, MOSFETs Overview
The GSFPB0976 is a 100V N-Channel MOSFET utilizing advanced process technology for high cell density and low on-resistance. It features an 8mΩ maximum RDS(ON) at VGS=10V, supporting continuous drain currents of 80A at 25°C case temperature. The device operates within a junction temperature range of -55°C to +150°C and dissipates up to 125W at 25°C. Packaged in a PPAK5x6 surface-mount format, it offers fast switching capabilities with a reverse body recovery diode.
Single FETs, MOSFETs Feature Summary
- Advanced MOSFET process technology achieving high cell density
- Low on-resistance combined with low gate charge for efficiency
- Fast switching performance with reverse body recovery characteristics
Single FETs, MOSFETs Applications
- High efficiency switched mode power supplies
- DC/DC converter circuits
- Load switch applications
Single FETs, MOSFETs Procurement Notes
Verify the specific package marking and date code against the manufacturer's latest documentation before integration. Confirm that thermal management solutions align with the specified junction-to-case resistance values under actual operating conditions. Ensure gate drive voltages remain within the absolute maximum ratings to prevent oxide breakdown.
Single FETs, MOSFETs Selection Notes
Select this component when designing circuits requiring low conduction losses at 100V blocking voltage. The PPAK5x6 package provides a compact footprint suitable for high-density PCB layouts. Evaluate thermal derating curves to ensure continuous current capacity meets system requirements at elevated case temperatures.
Single FETs, MOSFETs Part Context
This part belongs to Good-Ark Semiconductor's lineup of power MOSFETs designed for general-purpose switching applications. The PPAK5x6 package variant offers improved thermal performance compared to standard SO-8 packages while maintaining a similar board footprint. It serves as a direct replacement for legacy components in 100V synchronous rectifier designs.
Single FETs, MOSFETs Replacement Considerations
Cross-reference pinouts and thermal resistance values when substituting equivalent parts from other manufacturers. Verify that alternative devices meet or exceed the 8mΩ RDS(ON) specification and support the required 80A continuous current rating.
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