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The GSID100A120T2C1A is a 1200V IGBT module from SemiQ. It features a continuous collector current of 200A and a maximum power dissipation of 800W. The device utilizes an insulated gate bipolar transistor technology housed in a module package.
Verify the specific datasheet revision for accurate electrical characteristics before integration. Confirm mechanical mounting dimensions and thermal interface requirements with the manufacturer's official documentation to ensure proper system compatibility and performance.
Select this component for applications requiring high voltage isolation and significant current handling capabilities. Evaluate the thermal resistance parameters against the intended heat sink design to maintain junction temperatures within safe operating limits during continuous operation.
This part belongs to SemiQ's discrete and power modules category. It represents a solution for medium-to-high power switching applications where efficiency and voltage withstand are critical design factors for modern electronic power systems.
No public confirmed substitute part numbers are available in the provided data. Cross-reference with other 1200V, 200A IGBT modules only after verifying pinout and thermal specifications match the existing design constraints.