GSID200A120S5C1

GSID200A120S5C1

  • Description:IGBT MODULE 1200V 335A
  • Series:-

SKU:8f7e66adc346 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:IGBT MODULE 1200V 335A
  • Series:-
  • Mfr:SemiQ
  • Package:Bulk
  • IGBT Type:-
  • Configuration:Three Phase Inverter
  • Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 200A
  • Input:Standard
  • NTC Thermistor:Yes
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:Module
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):335 A
  • Power - Max:-
  • Current - Collector Cutoff (Max):1 mA
  • Input Capacitance (Cies) @ Vce:22.4 nF @ 25 V

Download product information

GSID200A120S5C1

Overview

The GSID200A120S5C1 is a high-power Insulated Gate Bipolar Transistor (IGBT) module manufactured by SemiQ. This component is rated for a collector-emitter voltage of 1200V and offers a continuous collector current capacity of 335A. Designed for robust industrial applications, it integrates IGBT technology within a single module package to facilitate efficient power switching in high-voltage circuits.

Feature Summary

  • High voltage blocking capability suitable for demanding power electronics environments
  • High current handling capacity for efficient power conversion
  • Module packaging design intended to simplify thermal management and mechanical integration

Applications

  • Industrial motor drives
  • Uninterruptible power supplies (UPS)
  • Welding equipment

Procurement Notes

Verify the specific datasheet revision and electrical characteristics against the official SemiQ documentation before procurement. Confirm that the 1200V rating and 335A current specifications align with your system's thermal and electrical requirements. Ensure compliance with RoHS3 standards as indicated in available product descriptions. Cross-reference part numbers to avoid confusion with similar modules in the SemiQ portfolio.

Selection Notes

Select this module when designing systems requiring high voltage isolation and substantial current handling capabilities. Consider the thermal resistance and mounting requirements associated with the module package. Evaluate the switching speed and saturation voltage parameters from the official datasheet to ensure compatibility with your control circuitry and efficiency targets.

Part Context

This IGBT module belongs to SemiQ's lineup of power semiconductor devices designed for high-efficiency applications. The company specializes in silicon carbide components, but this specific model utilizes IGBT technology. It serves as a critical switching element in power converters where reliability under high stress conditions is paramount.

Replacement Considerations

Consult official SemiQ documentation for direct cross-references or recommended alternative part numbers. Verify pinout compatibility and electrical ratings if substituting with other manufacturers' modules. Ensure any replacement maintains the required 1200V voltage rating and comparable current handling capacity.

GSID200A120S5C1GSID200A120S5C1

Click on the inquiry