GSID300A125S5C1

GSID300A125S5C1

  • Description:IGBT MOD 1250V 600A 2500W
  • Series:-

SKU:307e2d8eb007 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT MOD 1250V 600A 2500W
  • Series:-
  • Mfr:SemiQ
  • Package:Bulk
  • IGBT Type:Trench Field Stop
  • Configuration:3 Phase Inverter
  • Vce(on) (Max) @ Vge, Ic:2.4V @ 15V, 300A
  • Input:Standard
  • NTC Thermistor:Yes
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:Module
  • Voltage - Collector Emitter Breakdown (Max):1250 V
  • Current - Collector (Ic) (Max):600 A
  • Power - Max:2500 W
  • Current - Collector Cutoff (Max):1 mA
  • Input Capacitance (Cies) @ Vce:30.8 nF @ 25 V

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GSID300A125S5C1

Overview

The GSID300A125S5C1 is a silicon carbide (SiC) diode module manufactured by SemiQ. It features a half-bridge configuration with screw mount installation. The device supports a reverse voltage of 1.2 kV and a forward current of 300 A. The forward voltage is specified at 2.15 V. Operating temperatures range from -40 C to +150 C. The component utilizes SiC technology for high-performance power applications.

Feature Summary

  • Utilizes silicon carbide technology for enhanced thermal performance
  • Designed as a half-bridge power module for efficient circuit integration
  • Supports screw mount installation for robust mechanical stability

Applications

  • High-power industrial motor drives
  • Renewable energy inverter systems
  • Uninterruptible power supply units

Procurement Notes

Verify the specific datasheet version for the GSID300A125S5C1 to confirm exact electrical characteristics and mechanical dimensions before integration. Ensure compatibility with existing thermal management solutions, as SiC modules require precise temperature control. Cross-reference pinouts and mounting hole patterns with the host PCB or busbar design to prevent assembly errors during production.

Selection Notes

Select this module when high voltage blocking capability and significant current handling are required in a compact form factor. The SiC material choice offers advantages in switching speed and thermal conductivity compared to traditional silicon devices. Consider the 1.2 kV rating for medium-voltage AC/DC conversion applications where efficiency and heat dissipation are critical design constraints.

Part Context

This component belongs to SemiQ's discrete semiconductor product line, specifically within their diode and rectifier categories. It represents part of the manufacturer's portfolio focused on wide-bandgap semiconductor solutions. The GSID series indicates a specific family of high-power modules designed for demanding power electronics environments requiring reliability and high performance.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with alternative components based on matching voltage, current, and package specifications through official manufacturer cross-reference tools.

GSID300A125S5C1GSID300A125S5C1

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