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The GSXD120A006S1-D3 is a silicon carbide Schottky diode module manufactured by SemiQ. It features a 600V reverse voltage rating and supports a continuous forward current of 120A. The device utilizes a SOT-227-4 (Minibloc) package designed for screw mount installation. Key electrical characteristics include a maximum forward voltage of 2.15V at rated current and a low reverse leakage current of 1mA at full blocking voltage. The module operates within a junction temperature range of -55°C to +175°C, ensuring reliability in high-power applications.
Verify the specific suffix D3 against official SemiQ documentation to confirm pinout compatibility and thermal interface specifications. Ensure that the sourcing channel provides original manufacturer packaging to prevent counterfeit components. Cross-reference the datasheet revision date to validate the accuracy of the electrical parameters provided in your design calculations.
Select this component when designing systems requiring high-temperature operation up to 175°C and low conduction losses at 600V ratings. Compare the forward voltage drop against alternative SiC modules to optimize overall system efficiency. Consider the thermal resistance characteristics of the Minibloc package when designing heatsinking solutions for continuous 120A loads.
This module belongs to the GHXS series of SiC Schottky diodes from SemiQ. The series is engineered for power conversion applications demanding high reliability and compact form factors. The GCMX and GHXS families represent SemiQ's core portfolio for EV charging and renewable energy infrastructure.
The GSXD120A006S1-D3 supports a maximum junction temperature of +175°C.
It uses the SOT-227-4 Minibloc package, which is a standardized screw-mount footprint widely used in industrial power modules.
The maximum forward voltage is specified as 2.15V at a forward current of 120A.