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Product Detailed Parameters
- Description：DIODE MOD SCHOT 150V 120A SOT227
- Series：-
- Mfr：SemiQ
- Package：Tube
- Diode Configuration：2 Independent
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：150 V
- Current - Average Rectified (Io) (per Diode)：120A
- Voltage - Forward (Vf) (Max) @ If：880 mV @ 120 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：3 mA @ 150 V
- Operating Temperature - Junction：-40°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：SOT-227-4, miniBLOC
- Supplier Device Package：SOT-227
- Grade：-
- Qualification：-
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Overview
The GSXD120A015S1-D3 is a silicon carbide Schottky diode module manufactured by SemiQ. It features a 1200V reverse voltage rating and a 120A forward current capacity. The device utilizes SOT-227-4 (Minibloc) packaging with screw mount installation. Key electrical parameters include a maximum forward voltage of 2.6V at 120A and a typical reverse leakage current of 1mA at 1200V. It operates within a junction temperature range of -40°C to +175°C and dissipates up to 882W of power.
Feature Summary
- Utilizes Silicon Carbide (SiC) technology for high-temperature operation and low switching losses.
- Features a Schottky barrier configuration to eliminate reverse recovery charge.
- Designed in a robust SOT-227-4 Minibloc package for efficient thermal management.
Applications
- High-frequency DC-DC converters
- Solar micro-inverters
- Uninterruptible power supplies (UPS)
- Induction heating systems
Procurement Notes
Verify the specific suffix D3 against official SemiQ documentation to confirm tape-and-reel packaging specifications. Ensure the ordering part number matches the exact voltage and current ratings required for the target application circuit. Cross-reference the datasheet revision date to validate thermal resistance values before finalizing procurement.
Selection Notes
Select this component for applications requiring high efficiency and minimal switching losses due to its zero reverse recovery characteristic. Evaluate the thermal performance based on the specified 882W power dissipation capability. Confirm that the system operating voltage remains below the 1200V breakdown limit under all transient conditions.
Part Context
This module belongs to the SemiQ GHXS series of SiC Schottky diodes. It is designed as a replacement for traditional silicon fast recovery diodes in high-power density applications. The Minibloc form factor allows for direct mounting onto standard heatsinks, simplifying mechanical integration into existing power electronics designs.
Replacement Considerations
Direct replacements may include other 1200V/120A SiC Schottky modules from manufacturers such as Wolfspeed or ROHM. Verify pinout compatibility and thermal interface requirements when substituting with equivalent parts from different vendors.
