GSXD160A020S1-D3

Overview

The GSXD160A020S1-D3 is a Silicon Carbide (SiC) Schottky diode module manufactured by SemiQ. It features a 200V reverse voltage rating and a continuous forward current of 160A. The device utilizes SOT-227-4 packaging for chassis mounting. Key electrical parameters include a maximum forward voltage of 2.5V at rated current and an operating temperature range from -55°C to +175°C.

Feature Summary

• Utilizes Silicon Carbide technology for high-temperature operation
• Schottky barrier construction minimizes reverse recovery charge
• Designed for robust chassis mounting applications

Applications

• High-frequency power conversion systems
• Industrial motor drives
• Uninterruptible power supplies

Procurement Notes

Verify the specific suffix and package variant against official datasheets before procurement. Confirm thermal interface requirements and mounting torque specifications with the manufacturer's documentation to ensure proper installation and performance reliability in the target application environment.

Selection Notes

Select this component for designs requiring low switching losses and high thermal stability. Ensure the system voltage does not exceed the 200V rating and that the cooling solution supports the 160A current capacity within the specified temperature limits. Compare against alternative SiC modules for footprint compatibility.

Part Context

This part belongs to the SemiQ GSXD series of discrete and power modules. It is categorized under diode arrays and rectifiers, specifically designed as a Schottky barrier diode module. The series targets high-efficiency power electronics applications where fast switching and thermal resilience are critical design constraints.

Replacement Considerations

Publicly confirmed substitute part numbers for this specific model were not identified in the provided source material. Verify pinout and thermal characteristics when considering generic equivalents.