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Product Detailed Parameters
- Description：DIODE MODULE GP 1200V 30A SOT227
- Series：-
- Mfr：SemiQ
- Package：Tube
- Diode Configuration：2 Independent
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：1200 V
- Current - Average Rectified (Io) (per Diode)：30A
- Voltage - Forward (Vf) (Max) @ If：2.35 V @ 30 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：85 ns
- Current - Reverse Leakage @ Vr：25 µA @ 1200 V
- Operating Temperature - Junction：-55°C ~ 175°C
- Mounting Type：Chassis Mount
- Package / Case：SOT-227-4, miniBLOC
- Supplier Device Package：SOT-227
- Grade：-
- Qualification：-
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Overview
The GSXF030A120S1-D3 is a diode array manufactured by SemiQ, featuring two independent channels. It utilizes Silicon Carbide (SiC) technology and is housed in an SOT-227-4 package with chassis mount installation style. The device supports a drain-source breakdown voltage of 1200 V and a continuous drain current of 30 A. Key electrical parameters include a gate-source voltage range of -5 V to +20 V and a threshold voltage of 4 V. Operating temperatures range from -40 C to +150 C, with power dissipation rated at 1.531 kW.
Feature Summary
- Dual independent channel configuration for flexible circuit integration
- Silicon Carbide construction for high-voltage performance
- Chassis mount design suitable for industrial applications
Applications
- Industrial power management systems
- High-voltage rectification circuits
- General purpose diode arrays
Procurement Notes
Verify the specific datasheet version and RoHS compliance status before procurement. Confirm that the SOT-227-4 package dimensions match the mechanical constraints of the target chassis mount application. Ensure thermal management solutions are adequate for the specified power dissipation rating under expected operating conditions.
Selection Notes
Select this component when dual independent high-voltage rectification is required in a compact form factor. The SiC technology offers advantages in high-temperature environments compared to standard silicon alternatives. Consider the 1200 V rating and 30 A current capacity against the specific load requirements of the intended power conversion topology.
Part Context
This part belongs to the SemiQ diode array product line, designed for robust power electronics applications. It complements other SemiQ discrete components by providing integrated dual-channel functionality. The series focuses on high-efficiency switching and rectification using wide-bandgap semiconductor materials for improved system reliability.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and thermal characteristics if considering alternative manufacturers' diode arrays with similar voltage and current ratings.
