GT060N04K

$0.99

Description：MOSFET, N-CH, 40V,54A,TO-252
Series：SGT
Mfr：Goford Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:7a481e0a950e Category: Single FETs, MOSFETs Brand: Goford Semiconductor

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Product introduction

GT060N04K is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is MOSFET, N-CH, 40V,54A,TO-252. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for GT060N04K

Description：MOSFET, N-CH, 40V,54A,TO-252
Series：SGT
Mfr：Goford Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：62A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：25 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1280 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：70W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for GT060N04K

GT060N04K

Single FETs, MOSFETs Overview

The GT060N04K is an N-Channel Enhancement Mode Power MOSFET manufactured by Goford Semiconductor. It utilizes advanced trench technology to achieve low gate charge and excellent on-resistance. The device features a Drain-Source Voltage (VDS) of 40 V and a Continuous Drain Current (ID) of 62 A at 25°C case temperature. The maximum Drain-Source On-Resistance (RDS(on)) is specified as less than 8 mΩ at VGS = 10 V and ID = 30 A, and less than 10 mΩ at VGS = 4.5 V and ID = 20 A. It is housed in a TO-252 package with a thermal resistance from junction-to-case of 1.78 °C/W.

Single FETs, MOSFETs Feature Summary

Advanced trench technology provides low gate charge and high switching efficiency.
Highly rugged design verified through 100% avalanche testing.
Optimized for compact power supplies with high power density capabilities.

Single FETs, MOSFETs Applications

Power switch circuits
DC/DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to ensure correct packaging configuration. Confirm RoHS compliance status and check for any updated datasheet revisions prior to finalizing procurement specifications. Ensure the TO-252 package dimensions match the target PCB layout requirements.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a 40 V rating with up to 62 A continuous current capability. Consider the low RDS(on) values for minimizing conduction losses in high-efficiency designs. Evaluate the thermal performance based on the 1.78 °C/W junction-to-case resistance for appropriate heatsinking strategies.

Single FETs, MOSFETs Part Context

This part belongs to the Goford Semiconductor N-Channel MOSFET portfolio designed for general-purpose power switching. It is engineered to replace traditional devices in space-constrained environments while maintaining robust electrical performance and reliability standards for industrial and consumer electronics.