GT40WR21,Q

$9.61

Description：IGBT 1350V 40A TO-3P
Series：-

SKU:0320e1e9b6a9 Category: Single IGBTs Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：IGBT 1350V 40A TO-3P
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tray
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：1350 V
Current - Collector (Ic) (Max)：40 A
Current - Collector Pulsed (Icm)：80 A
Vce(on) (Max) @ Vge, Ic：5.9V @ 15V, 40A
Power - Max：375 W
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-3P-3, SC-65-3
Supplier Device Package：TO-3P(N)
Grade：-
Qualification：-

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GT40WR21,Q

Overview

The GT40WR21,Q is a silicon N-channel IGBT from Toshiba Semiconductor and Storage, designed for voltage-resonant inverter switching applications. It features an integrated freewheeling diode (RC-IGBT) within the chip. The device operates with a collector-emitter voltage of 1800 V and a continuous collector current of 40 A at 25°C. Key electrical parameters include a typical saturation voltage of 2.9 V at 40 A, a fall time of 0.15 µs, and a reverse recovery time of 1.0 µs. It supports a maximum junction temperature of 175°C and utilizes a TO-3P(N) through-hole package.

Feature Summary

Monolithically integrated freewheeling diode combined with the IGBT chip
High-speed switching capability optimized for resonant inverter circuits
Enhanced mode operation with low saturation voltage characteristics

Applications

Voltage-Resonant Inverter Switching Applications

Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm exact packaging or environmental compliance details. Confirm RoHS compatibility status directly with the manufacturer or authorized distributors prior to procurement. Ensure that design margins account for the absolute maximum ratings provided in the datasheet to maintain operational reliability under varying thermal conditions.

Selection Notes

Select this component specifically for voltage-resonant inverter designs where high-speed switching and low conduction losses are required. Evaluate the thermal resistance and heat dissipation requirements carefully, as the device supports a maximum junction temperature of 175°C. Ensure gate drive circuits accommodate the specified input capacitance and switching times to achieve optimal performance without exceeding safe operating area limits.

Part Context

This part belongs to Toshiba's discrete IGBT lineup, representing the 6.5th generation technology. It is engineered to provide improved switching speed and lower saturation voltage compared to previous iterations. The integration of the freewheeling diode simplifies circuit design by reducing component count and parasitic inductance in high-frequency power conversion systems.

Replacement Considerations

Consult official Toshiba cross-reference lists for verified substitutes. Generic replacements may not match the specific RC-IGBT configuration or switching characteristics required for resonant inverter applications.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

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Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

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Mode of Transportation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.