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Product Detailed Parameters
- Description：IGBT 400V 600MW 8TSSOP
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：400 V
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：150 A
- Vce(on) (Max) @ Vge, Ic：2.9V @ 4V, 150A
- Power - Max：600 mW
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：1.7µs/2µs
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package：8-TSSOP
- Grade：-
- Qualification：-
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Overview
The GT8G133 is a silicon N-channel IGBT designed for strobe flash applications. It features an enhancement-mode configuration with a compact TSSOP-8 package. The device supports a collector-emitter voltage of 400 V and a peak collector current of 150 A. It operates with a minimum gate drive voltage of 4.0 V at the rated current. Electrical characteristics include a typical collector-emitter saturation voltage of 2.9 V, input capacitance of 2500 pF, and switching times ranging from 1.6 to 2.0 μs. The maximum junction temperature is 150 °C.
Feature Summary
- Compact and thin TSSOP-8 package
- Enhancement-mode operation
- Low gate drive voltage requirement
- High peak collector current capability
Applications
- Strobe flash circuits
Procurement Notes
Verify RoHS compliance status directly with Toshiba Semiconductor and Storage representatives, as the datasheet indicates that specific product-by-product details regarding lead-free finishes require direct inquiry. Confirm the ordering suffix corresponds to the desired terminal finish and packaging format before finalizing procurement orders.
Selection Notes
Select this component for high-current strobe flash drivers requiring low gate drive voltage. Ensure thermal management accommodates the specified thermal resistance values on glass-epoxy boards. Design dV/dt below 400 V/μs during turn-off to prevent malfunction. Verify gate resistance ranges align with switching time requirements.
Part Context
This part belongs to Toshiba's lineup of insulated gate bipolar transistors optimized for pulse power applications. It integrates N-channel technology in a surface-mount package suitable for space-constrained designs. The device is distinct from through-hole variants due to its specific thermal dissipation characteristics and pinout configuration.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-reference with other Toshiba IGBTs featuring similar 400 V ratings and TSSOP-8 packages only after verifying electrical compatibility and thermal performance.
FAQ
What is the minimum gate drive voltage required for full conduction?
The minimum gate drive voltage is 4.0 V when the collector current is 150 A.
How should dV/dt be managed during turn-off?
The design must ensure the dV/dt value remains below 400 V/μs when the IGBT turns off.
What is the maximum operating junction temperature?
The maximum junction temperature (Tj) is 150 °C.
