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The GWA40MS120DF4AG is an automotive-grade IGBT from the MS series, utilizing a trench gate field-stop structure. It features a 1200 V collector-emitter voltage rating and an 80 A continuous collector current at 25 °C case temperature. The device provides a typical saturation voltage of 1.95 V at 40 A and supports an 8 μs short-circuit withstand time at 800 V bus voltage. Packaged in TO-247 long leads with tube packing, it operates within a junction temperature range of -55 °C to 175 °C and holds AEC-Q101 qualification.
Verify the specific ordering code GWA40MS120DF4AG against the manufacturer's official datasheet DS14215 Rev 5 to confirm technical specifications and package details. Ensure that the required environmental compliance grade matches the project requirements by consulting the ECOPACK specifications available on the STMicroelectronics website before finalizing procurement.
Select this component when designing inverter systems requiring high short-circuit capability at elevated bus voltages. The positive temperature coefficient of the saturation voltage facilitates safe parallel operation without complex current balancing circuits. Verify that the thermal design accommodates the specified junction-to-case thermal resistance values for both the IGBT and the integrated diode under maximum operating conditions.
This device belongs to the MS series of IGBTs, representing an evolution of the low-loss M series. It is specifically engineered for inverter systems where outstanding short-circuit capability at high bus voltage values is critical. The product status is listed as active, indicating ongoing manufacturing support.
No public confirmed substitute part numbers are documented in the provided source material.