GWM120-0075P3

FET, MOSFET Arrays Overview

The GWM120-0075P3 is a three-phase full bridge module utilizing Trench MOSFET technology in a DCB isolated high current package. It features six N-channel enhancement mode MOSFETs with an integrated intrinsic reverse diode. Key electrical parameters include a drain-source breakdown voltage (VDSS) of 75 V, a continuous drain current (ID25) of 118 A at 25°C case temperature, and a typical on-chip drain-source resistance (RDSon) of 3.7 mΩ at 25°C. The module supports a maximum junction temperature of 150°C and offers thermal resistance from junction to case (RthJC) of 1.3 K/W.

FET, MOSFET Arrays Feature Summary

• Integrates six Trench MOSFETs into a single three-phase full bridge configuration for high-level system integration.
• Features an optimized intrinsic reverse diode designed for low conduction losses and fast switching characteristics.
• Utilizes an isolated DCB ceramic base plate to provide high current capability up to 300 A and efficient heat transfer.
• Includes auxiliary terminals specifically designed for independent MOSFET gate control.

FET, MOSFET Arrays Applications

• AC drives
• Electric power steering systems in automobiles
• Propulsion drives for industrial vehicles
• Starter generator applications
• Battery supplied equipment

FET, MOSFET Arrays Procurement Notes

Verify the specific lead form requirement before ordering, as the base model number does not indicate the terminal style. The datasheet lists three distinct ordering codes corresponding to straight leads, surface mount device (SMD) versions, and bent leads. Confirm that the selected variant matches the intended mounting method and mechanical constraints of the target assembly.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring a compact, high-current three-phase solution with a 75 V rating. Ensure the thermal management design accounts for the specified RthJC values and the maximum junction temperature limit of 150°C. Verify that the gate drive circuitry can accommodate the auxiliary terminals provided for individual MOSFET control rather than a common gate connection.

FET, MOSFET Arrays Part Context

This module belongs to the GWM series of high-power discrete semiconductor assemblies manufactured by IXYS. It represents a specialized packaging solution that consolidates multiple power switches into a single unit to reduce board space and interconnection complexity compared to using individual TO-247 or similar packages.

FET, MOSFET Arrays Replacement Considerations

No public confirmed substitute part numbers are available in the source documentation.