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HAF1002-92L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is P-CHANNEL POWER MOSFET. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for HAF1002-92L
- Description：P-CHANNEL POWER MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Single FETs, MOSFETs datasheet and documents for HAF1002-92L
Single FETs, MOSFETs Overview
The HAF1002-92L is a silicon P-channel power MOSFET manufactured by Renesas Electronics Corporation. It is designed for power switching applications and features a built-in over-temperature shut-down circuit located in the gate area. This protection mechanism senses junction temperature to automatically shut down the device under thermal stress conditions, enhancing reliability.
Single FETs, MOSFETs Feature Summary
- Built-in over-temperature shut-down circuit in the gate area
- Junction temperature sensing capability for automatic shutdown
Single FETs, MOSFETs Applications
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix '92L' against official Renesas documentation to confirm exact pinout, packaging, or marking variations compared to the base HAF1002 series. Ensure the component meets required RoHS compliance standards as indicated in available distributor listings. Cross-reference the manufacturer part number with the latest datasheet revision to validate electrical characteristics and thermal parameters before integration.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring P-channel power switching with integrated thermal protection. The built-in over-temperature shut-down feature reduces the need for external thermal management circuits in certain designs. Evaluate the junction temperature sensing range and shutdown threshold against the specific operational environment requirements of the target system.
Single FETs, MOSFETs Part Context
This part belongs to the Renesas HAF1002 series of silicon P-channel MOSFETs. The series is characterized by power switching capabilities and integrated safety features such as over-temperature protection. The HAF1002-92L variant represents a specific configuration within this family, distinguished by its suffix which may indicate packaging or testing specifications.
Single FETs, MOSFETs Replacement Considerations
Consult official Renesas substitution guides for verified equivalents. Generic P-channel MOSFETs may lack the specific built-in over-temperature shut-down circuitry found in this component, potentially compromising system safety.
Single FETs, MOSFETs FAQ
What is the primary function of the built-in circuit in the HAF1002-92L?
It provides over-temperature shut-down capability by sensing the junction temperature and shutting down the device to prevent damage.
Where is the over-temperature sensing circuit located?
The over-temperature shut-down circuit is built into the gate area of the FET.
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