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HAT2043R-EL-E is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is MOSFET 2N-CH 30V 8A 8SOP. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for HAT2043R-EL-E
- Description：MOSFET 2N-CH 30V 8A 8SOP
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate, 4V Drive
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：8A (Ta)
- Rds On (Max) @ Id, Vgs：22mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：32nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1170pF @ 10V
- Power - Max：3W (Ta)
- Operating Temperature：150°C
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for HAT2043R-EL-E
FET, MOSFET Arrays Overview
The HAT2043R-EL-E is a silicon N-channel power MOSFET designed for high-speed power switching applications. It features an 8-pin SOT package with a rectangular plastic/epoxy body. The device contains two separate elements, each equipped with a built-in diode. Key electrical parameters include a minimum drain-source breakdown voltage of 30 V and a maximum continuous drain current of 8 A. The maximum on-resistance is specified at 0.029 Ω. It operates in enhancement mode with a maximum operating temperature of 150 °C. The component is lead-free, RoHS compliant, and classified under EAR99.
FET, MOSFET Arrays Feature Summary
- High-speed power switching capability utilizing silicon N-channel MOSFET technology
- Dual-element configuration integrated within a single compact package
- Built-in diodes incorporated into each channel element
FET, MOSFET Arrays Applications
- High-speed power switching circuits
- General purpose power management systems
FET, MOSFET Arrays Procurement Notes
Verify the specific datasheet revision and official Renesas documentation to confirm exact pinout assignments and thermal characteristics. Ensure compliance with RoHS standards and lead-free requirements as stated in the component description. Cross-reference the 8-pin SOT package dimensions against your PCB layout constraints before finalizing the design.
FET, MOSFET Arrays Selection Notes
Select this component when a dual N-channel MOSFET solution with low on-resistance is required for space-constrained designs. The 30 V breakdown voltage and 8 A current rating suit low-voltage switching tasks. Consider the 150 °C junction temperature limit for thermal management planning in enclosed environments.
FET, MOSFET Arrays Part Context
This part belongs to the Renesas discrete semiconductor transistor family. It is categorized specifically as a power MOSFET intended for efficient switching operations. The manufacturer provides this component as part of their broader portfolio of analog and power devices aimed at industrial and consumer electronics markets.
FET, MOSFET Arrays Replacement Considerations
Consult official Renesas substitution guides for verified alternatives. Generic cross-references may not match the specific 0.029 Ω on-resistance or dual-element configuration. Verify package compatibility and electrical ratings before substituting.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
