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HAT2218R0T-EL-E is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Renesas. Its product description is MOSFET N-CH. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for HAT2218R0T-EL-E
- Description：MOSFET N-CH
- Series：-
- Mfr：Renesas
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for HAT2218R0T-EL-E
FET, MOSFET Arrays Overview
The HAT2218R0T-EL-E is a dual N-channel power MOSFET manufactured by Renesas Electronics. It utilizes advanced trench gate technology to achieve high-speed switching capabilities and low on-resistance. The device integrates Schottky barrier diodes for efficient body diode replacement or freewheeling applications. Designed for surface mount assembly, it is housed in an LFPAK package suitable for automated PCB placement. The component operates as a silicon-based power switch, offering robust performance for DC-DC converters and motor control circuits requiring compact form factors and thermal efficiency.
FET, MOSFET Arrays Feature Summary
- Dual N-channel configuration with integrated Schottky barrier diodes
- Advanced trench gate technology for high-speed switching
- Low on-resistance characteristics for improved efficiency
- Surface-mount LFPAK packaging for compact board designs
FET, MOSFET Arrays Applications
- DC-DC converter modules
- Motor driver circuits
- Power supply output stages
- High-frequency switching applications
FET, MOSFET Arrays Procurement Notes
Verify the exact suffix EL-E against official Renesas documentation to confirm lead-free status and tape-and-reel packaging specifications. Confirm RoHS compliance details directly from the manufacturer's datasheet before procurement. Ensure the ordering code matches the specific variant required for your design to avoid compatibility issues with existing inventory or manufacturing processes.
FET, MOSFET Arrays Selection Notes
Select this component when a dual N-channel MOSFET with integrated Schottky diodes is required for space-constrained designs. Evaluate the thermal resistance and maximum current ratings against your specific load requirements. Consider the LFPAK package dimensions for PCB layout constraints. Verify that the switching speed and voltage ratings align with the target application's electrical parameters.
FET, MOSFET Arrays Part Context
This part belongs to Renesas' portfolio of discrete power semiconductors. It complements other MOSFET offerings by providing a dual-channel solution in a single package. The product line focuses on energy-efficient power management components for consumer electronics and industrial equipment. Renesas continues to support this series for legacy and new designs requiring reliable power switching solutions.
FET, MOSFET Arrays Replacement Considerations
Check for direct pin-compatible alternatives within the Renesas HAT series. Verify that any substitute maintains identical voltage, current, and thermal specifications. Ensure the replacement includes integrated Schottky diodes if required by the circuit design. Consult official substitution guides for confirmed equivalent parts.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
