RF Diode HBAT-5400-BLKG product image

HBAT-5400-BLKG

  • Description:DIODE SCHOTTKY 30V 250MW SOT23-3
  • Series:HBAT-540x

SKU:8784b90dcb51 Category: Brand:

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HBAT-5400-BLKG is listed in the RF Diode range at ChipApex. The manufacturer field lists Broadcom Limited. Its product description is DIODE SCHOTTKY 30V 250MW SOT23-3. Review the specifications below when checking this part for your BOM.

RF Diode specifications for HBAT-5400-BLKG

  • Description:DIODE SCHOTTKY 30V 250MW SOT23-3
  • Series:HBAT-540x
  • Mfr:Broadcom Limited
  • Package:Bulk
  • Diode Type:Schottky - Single
  • Voltage - Peak Reverse (Max):30V
  • Current - Max:220 mA
  • Capacitance @ Vr, F:-
  • Resistance @ If, F:-
  • Power Dissipation (Max):250 mW
  • Operating Temperature:150°C (TJ)
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3

RF Diode datasheet and documents for HBAT-5400-BLKG

HBAT-5400-BLKG

RF Diode Overview

The HBAT-5400-BLKG is a high-performance Schottky barrier diode designed for transient suppression and circuit protection. It features ultra-low series resistance of 2.4 Ω, enabling higher current handling capabilities compared to standard signal diodes. The device operates with a typical forward voltage of 800 mV at 100 mA and offers low capacitance of 3.0 pF to minimize signal degradation during high-speed switching. Packaged in a surface-mount SOT-23 format, it supports a DC forward current of 220 mA and withstands peak inverse voltages up to 30 V. The component exhibits extremely fast switching characteristics with a carrier lifetime under 100 ps.

RF Diode Feature Summary

  • Ultra-low series resistance optimizes current handling for protecting sensitive elements against high-current transients on data lines.
  • Low junction capacitance preserves waveshape integrity and minimizes signal degradation in high-frequency applications.
  • Picosecond switching speed allows rapid response to noise spikes with rise times as fast as 1 ns.

RF Diode Applications

  • RF and computer designs requiring circuit protection
  • High-speed switching applications
  • Voltage clamping and waveform preservation

RF Diode Procurement Notes

Verify the specific ordering suffix BLKG corresponds to the antistatic bag packaging configuration containing 100 units. Confirm that the manufacturer designation matches Avago Technologies or its successor entities, as product ownership may have transferred. Ensure the datasheet version aligns with the required revision level for your design specifications.

RF Diode Selection Notes

Select this component when low series resistance is critical for managing high transient currents without excessive thermal runaway. Compare the SOT-23 package thermal resistance against requirements; if higher steady-state current capacity is needed, consider the SOT-323 variants like the HBAT-540B which utilize copper leadframes for improved heat dissipation.

RF Diode Part Context

This part belongs to the HBAT-540x series of clipping and clamping diodes manufactured by Avago Technologies. The series includes single diodes (HBAT-5400, HBAT-5402) and series pairs (HBAT-540B, HBAT-540C). The HBAT-5400 specifically denotes the single diode configuration housed in the SOT-23 package.

RF Diode Replacement Considerations

The HSMS-270x series serves as a related alternative within the same manufacturer's portfolio. While the HSMS-270x offers lower series resistance (0.65 Ω) and higher current handling, it possesses higher junction capacitance (6.7 pF), which may impact high-frequency signal integrity differently than the HBAT-5400.

RF Diode FAQ

What is the maximum peak surge current the HBAT-5400 can handle?

The absolute maximum rating for peak surge current with a 1 μs pulse duration is 1.0 A.

How does the series resistance affect performance in clamping circuits?

The low series resistance of 2.4 Ω prevents significant voltage rise across the diode terminals during high current spikes, thereby avoiding thermal runaway and maintaining effective voltage clamping limits.

What is the typical carrier lifetime for this device?

The typical carrier lifetime is less than 100 ps, contributing to its classification as an extremely fast switching semiconductor suitable for high-frequency operations.

HBAT-5400-BLKGHBAT-5400-BLKG

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