RF Diode HBAT-540C-BLKG product image

HBAT-540C-BLKG

  • Description:DIODE SCHOTTKY 30V 825MW SOT323
  • Series:HBAT-540x

SKU:83996a743a98 Category: Brand:

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HBAT-540C-BLKG is listed in the RF Diode range at ChipApex. The manufacturer field lists Broadcom Limited. Its product description is DIODE SCHOTTKY 30V 825MW SOT323. Review the specifications below when checking this part for your BOM.

RF Diode specifications for HBAT-540C-BLKG

  • Description:DIODE SCHOTTKY 30V 825MW SOT323
  • Series:HBAT-540x
  • Mfr:Broadcom Limited
  • Package:Bulk
  • Diode Type:Schottky - 1 Pair Series Connection
  • Voltage - Peak Reverse (Max):30V
  • Current - Max:430 mA
  • Capacitance @ Vr, F:-
  • Resistance @ If, F:-
  • Power Dissipation (Max):825 mW
  • Operating Temperature:150°C (TJ)
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SOT-323

RF Diode datasheet and documents for HBAT-540C-BLKG

HBAT-540C-BLKG

RF Diode Overview

The HBAT-540C-BLKG is a high-performance Schottky diode from the HBAT-540x series, designed for transient suppression and circuit protection. It features a dual-series configuration in an SOT-323 (SC-70) leadless package. Key electrical specifications include a typical forward voltage of 800 mV at 100 mA, a breakdown voltage of 30 V, and a total capacitance of 3.0 pF. The device exhibits low series resistance of 2.4 Ω and a carrier lifetime under 100 ps, enabling picosecond switching speeds. It supports a DC forward current of 430 mA and peak surge currents up to 1.0 A, with operation temperatures ranging from -65°C to +150°C.

RF Diode Feature Summary

  • Ultra-low series resistance enables higher current handling capacity for protecting sensitive circuits against high-current transients.
  • Picosecond switching response allows effective clamping of noise spikes with rise times as fast as 1 ns.
  • Low junction capacitance minimizes waveshape loss and signal degradation in high-speed data lines.

RF Diode Applications

  • RF and computer designs requiring circuit protection
  • High-speed switching applications
  • Voltage clamping and transient suppression on data lines

RF Diode Procurement Notes

Verify component authenticity through authorized Broadcom distributors. Confirm lot traceability and RoHS compliance status prior to integration. Ensure storage conditions maintain moisture sensitivity levels according to manufacturer guidelines. Validate packaging integrity to prevent electrostatic discharge damage during handling and assembly processes.

RF Diode Selection Notes

Select the HBAT-540C variant over single-diode options when dual-series configurations are required for balanced clamping. Consider the SOT-323 package thermal characteristics for steady-state current limits. Evaluate the 2.4 Ω series resistance impact on forward voltage drop at expected operating currents compared to lower-resistance alternatives.

RF Diode Part Context

This component belongs to the HBAT-540x family of high-performance Schottky diodes manufactured by Broadcom Limited. The series includes variants like HBAT-5400, HBAT-5402, and HBAT-540B, differentiated by package type and internal configuration. These devices are engineered specifically for transient suppression where low capacitance and high current handling are critical.

RF Diode Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should evaluate alternative Schottky diodes with similar series resistance and capacitance values if this specific part is unavailable.

HBAT-540C-BLKGHBAT-540C-BLKG

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