RF Diode HBAT-540C-TR1 product image

HBAT-540C-TR1

$0.14
  • Description:DIODE SCHOTTKY 30V 825MW SOT323
  • Series:HBAT-540x

SKU:dba6946de71a Category: Brand:

  
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HBAT-540C-TR1 is listed in the RF Diode range at ChipApex. The manufacturer field lists Broadcom Limited. Its product description is DIODE SCHOTTKY 30V 825MW SOT323. Review the specifications below when checking this part for your BOM.

RF Diode specifications for HBAT-540C-TR1

  • Description:DIODE SCHOTTKY 30V 825MW SOT323
  • Series:HBAT-540x
  • Mfr:Broadcom Limited
  • Package:Tape & Reel (TR)
  • Diode Type:Schottky - 1 Pair Series Connection
  • Voltage - Peak Reverse (Max):30V
  • Current - Max:430 mA
  • Capacitance @ Vr, F:-
  • Resistance @ If, F:-
  • Power Dissipation (Max):825 mW
  • Operating Temperature:150°C (TJ)
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SOT-323

RF Diode datasheet and documents for HBAT-540C-TR1

HBAT-540C-TR1

RF Diode Overview

The HBAT-540C-TR1 is a Schottky barrier diode manufactured by Broadcom Limited, belonging to the HBAT-540x series. It features a single pair of diodes in a series configuration housed in an SOT-323 (SC-70) surface-mount package. The device supports a maximum repetitive peak reverse voltage of 30V and a continuous forward current of 430 mA. Power dissipation is rated at 825 mW, with a maximum junction operating temperature of 150°C. The component is supplied in tape and reel packaging.

RF Diode Feature Summary

  • Schottky barrier technology for low forward voltage drop
  • Single pair series configuration within one package
  • High thermal stability with 150°C junction rating

RF Diode Applications

  • RF signal detection and mixing circuits
  • Power supply rectification in compact designs
  • Clamping and protection in high-speed digital interfaces

RF Diode Procurement Notes

Verify part authenticity through authorized distributors as this component is obsolete. Confirm exact suffixes such as TR1G against datasheets since variations exist. Check replacement availability from Nexperia or onsemi due to discontinuation status. Ensure RoHS compliance matches project requirements before procurement.

RF Diode Selection Notes

Select based on 30V reverse voltage and 430mA current limits suitable for low-power RF applications. Compare power dissipation ratings against thermal constraints in the final assembly. Verify package compatibility with PCB footprint requirements for SOT-323 mounting.

RF Diode Part Context

This component is part of the HBAT-540x family of Schottky diodes produced by Broadcom Limited. It serves as a specialized RF diode offering compact integration for signal processing tasks. The series is designed for applications requiring fast switching and low capacitance characteristics in small form factors.

RF Diode Replacement Considerations

Public confirmed substitutes include 1PS70SB14,115 from Nexperia USA Inc., BAT54SW,115 from Nexperia USA Inc., BAT54SWFILM from STMicroelectronics, and BAT54SWT1G from onsemi.

HBAT-540C-TR1HBAT-540C-TR1
$0.14
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