HERF1003G

Diode Arrays Overview

The HERF1003G is a high-efficiency rectifier from Taiwan Semiconductor, rated for a repetitive peak reverse voltage of 200 V and an average forward current of 10 A. It features a maximum non-repetitive surge forward current of 125 A and operates within a junction temperature range of -55 to +150 °C. The device utilizes an ITO-220AB package with dual dies in a common cathode configuration. Electrical characteristics include a typical forward voltage of 1.0 V at 5 A, a maximum reverse recovery time of 50 ns, and a junction-to-case thermal resistance of 3 °C/W.

Diode Arrays Feature Summary

• High efficiency with low forward voltage drop
• High current and surge current capability
• Low power loss operation
• UL Recognized File # E-326243

Diode Arrays Applications

• DC to DC converter
• Switching mode converters and inverters
• Freewheeling application

Diode Arrays Procurement Notes

Verify the specific part number suffix against official documentation to confirm compliance status. The standard 'G' suffix indicates a green compound that is halogen-free according to IEC 61249-2-21. An 'H' suffix denotes AEC-Q101 qualification. Confirm the exact packing quantity and tube specifications directly with the manufacturer or authorized distributors before procurement.

Diode Arrays Selection Notes

Select this component for applications requiring a 200 V blocking voltage and 10 A continuous current handling. Ensure the design accommodates the specified thermal resistance of 3 °C/W for proper heat dissipation. Verify that the operating environment stays within the -55 to +150 °C junction temperature limits. Consider the 50 ns reverse recovery time suitability for the target switching frequency.

Diode Arrays Part Context

This component belongs to the HERF1001G through HERF1008G series of high-efficient rectifiers manufactured by Taiwan Semiconductor. The series offers varying voltage ratings from 50 V to 1000 V while maintaining a consistent 10 A current rating and ITO-220AB package form factor. The HERF1003G specifically addresses the 200 V requirement within this standardized product line.

Diode Arrays Replacement Considerations

Direct substitutes within the same series include HERF1001G (50V), HERF1002G (100V), HERF1004G (300V), HERF1005G (400V), HERF1006G (600V), HERF1007G (800V), and HERF1008G (1000V). Ensure the replacement matches the required voltage rating and maintains the ITO-220AB package compatibility.

Diode Arrays FAQ

What is the maximum non-repetitive peak forward current for the HERF1003G?

The maximum non-repetitive peak forward current (IFSM) is 125 A, measured as an 8.3ms single half sine wave superimposed on the rated load.

Does the HERF1003G meet RoHS and halogen-free standards?

Yes, the HERF1003G is compliant with the RoHS directive and is halogen-free according to IEC 61249-2-21.

What is the typical junction capacitance per diode for the HERF1003G?

The typical junction capacitance (CJ) per diode is 60 pF, measured at 1 MHz with a reverse voltage of 4.0 V.