HFA3128R96

HFA3128R96

  • Description:RF TRANS 5 PNP 15V 5.5GHZ 16-QFN
  • Series:-

SKU:e0cab28705c4 Category: Brand:

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Product Detailed Parameters

  • Description:RF TRANS 5 PNP 15V 5.5GHZ 16-QFN
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)
  • Transistor Type:5 PNP
  • Voltage - Collector Emitter Breakdown (Max):15V
  • Frequency - Transition:5.5GHz
  • Noise Figure (dB Typ @ f):3.5dB @ 1GHz
  • Gain:-
  • Power - Max:150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 10mA, 2V
  • Current - Collector (Ic) (Max):65mA
  • Operating Temperature:175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:16-VFQFN Exposed Pad
  • Supplier Device Package:16-QFN (3x3)
  • Grade:-
  • Qualification:-

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HFA3128R96

Overview

The HFA3128R96 is an ultra-high frequency transistor array fabricated using the Renesas complementary bipolar UHF-1 process. It consists of five dielectrically isolated PNP transistors on a common monolithic substrate, providing close electrical and thermal matching. The PNP devices offer a transition frequency (fT) of 5.5 GHz with low noise figures of 3.5 dB. Key electrical parameters include a collector-base breakdown voltage (V(BR)CBO) of 18 V, collector-emitter breakdown voltage (V(BR)CEO) of 12 V, and emitter-base breakdown voltage (V(BR)EBO) of 6 V. The package is a 14-pin SOICN with dimensions of 8.7 x 3.9 mm.

Feature Summary

  • Monolithic construction ensures tight electrical and thermal matching among all five transistors.
  • Dielectric isolation prevents latch-up and cross-talk between individual transistor elements.
  • Low noise performance minimizes signal distortion in high-frequency circuits.
  • Full terminal access to each transistor allows for maximum application flexibility.

Applications

  • High-frequency amplifier stages
  • RF mixer circuits
  • Space-engineered systems requiring radiation tolerance

Procurement Notes

Verify the specific suffix R96 against official Renesas documentation to confirm reel packaging specifications and moisture sensitivity level details. Ensure the component meets the required harsh environment ratings and MIL-STD-883 flow standards if applicable to the target design. Cross-reference the lead-free plating specifications with environmental compliance requirements.

Selection Notes

Select this device when a matched set of five PNP transistors is required for UHF applications. The 5.5 GHz fT makes it suitable for frequencies where NPN arrays may not be optimal. Consider the 14-pin SOICN package constraints for PCB layout. Verify that the 12 V V(BR)CEO rating aligns with the circuit's supply voltage headroom.

Part Context

The HFA3128 series belongs to Renesas' ultra-high frequency transistor array family, which also includes NPN variants like the HFA3046 and mixed NPN-PNP types like the HFA3096. These arrays are built on the same UHF-1 process, sharing similar noise characteristics but differing in transistor polarity and gain-bandwidth products. The HFA3128 specifically targets applications requiring multiple matched PNP devices.

Replacement Considerations

Direct substitutes include other HFA3128 variants with different suffixes indicating package or tape-and-reel options. For mixed NPN-PNP needs, consider the HFA3096. For all-NPN configurations, the HFA3046 or HFA3127 are appropriate alternatives within the same family.

HFA3128R96HFA3128R96

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