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The HFA3128R96 is an ultra-high frequency transistor array fabricated using the Renesas complementary bipolar UHF-1 process. It consists of five dielectrically isolated PNP transistors on a common monolithic substrate, providing close electrical and thermal matching. The PNP devices offer a transition frequency (fT) of 5.5 GHz with low noise figures of 3.5 dB. Key electrical parameters include a collector-base breakdown voltage (V(BR)CBO) of 18 V, collector-emitter breakdown voltage (V(BR)CEO) of 12 V, and emitter-base breakdown voltage (V(BR)EBO) of 6 V. The package is a 14-pin SOICN with dimensions of 8.7 x 3.9 mm.
Verify the specific suffix R96 against official Renesas documentation to confirm reel packaging specifications and moisture sensitivity level details. Ensure the component meets the required harsh environment ratings and MIL-STD-883 flow standards if applicable to the target design. Cross-reference the lead-free plating specifications with environmental compliance requirements.
Select this device when a matched set of five PNP transistors is required for UHF applications. The 5.5 GHz fT makes it suitable for frequencies where NPN arrays may not be optimal. Consider the 14-pin SOICN package constraints for PCB layout. Verify that the 12 V V(BR)CEO rating aligns with the circuit's supply voltage headroom.
The HFA3128 series belongs to Renesas' ultra-high frequency transistor array family, which also includes NPN variants like the HFA3046 and mixed NPN-PNP types like the HFA3096. These arrays are built on the same UHF-1 process, sharing similar noise characteristics but differing in transistor polarity and gain-bandwidth products. The HFA3128 specifically targets applications requiring multiple matched PNP devices.
Direct substitutes include other HFA3128 variants with different suffixes indicating package or tape-and-reel options. For mixed NPN-PNP needs, consider the HFA3096. For all-NPN configurations, the HFA3046 or HFA3127 are appropriate alternatives within the same family.