HFA3128RZ

Overview

The HFA3128RZ is an ultra-high frequency transistor array fabricated using the Renesas complementary bipolar UHF-1 process. It integrates five dielectrically isolated PNP transistors on a common monolithic substrate, providing close electrical and thermal matching. The device features a transition frequency (fT) of 5.5 GHz for the PNP transistors and exhibits a typical noise figure of 3.5 dB at 1 GHz. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 8 V, a maximum emitter-base voltage (VEBO) of 5.5 V, and a continuous collector current of 65 mA. The power dissipation is rated at 150 mW, with a minimum DC current gain (hFE) of 20. The operating temperature range spans from -55°C to +125°C.

Feature Summary

• Monolithic construction ensures close electrical and thermal matching among the five integrated transistors.
• Complete isolation between individual transistors allows for maximum application flexibility.
• Pin-compatible design facilitates replacement in existing industry-standard 3XXX series array circuits.

Applications

• VHF/UHF Amplifiers
• VHF/UHF Mixers
• IF Converters
• Synchronous Detectors

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels due to potential availability constraints. Confirm RoHS compliance status and specific suffix variations against the official datasheet before procurement. Ensure storage conditions adhere to moisture sensitivity level requirements to prevent package damage during soldering processes.

Selection Notes

Select this component when designing high-frequency circuits requiring matched PNP transistor arrays with low noise characteristics. Consider the 5.5 GHz transition frequency and 150 mW power dissipation limits for thermal management. Verify that the required supply voltages remain within the 8 V VCEO limit and that the 65 mA current rating suffices for the intended load applications.

Part Context

The HFA3128RZ belongs to the HFA3128 family of ultra-high frequency transistor arrays produced by Renesas Electronics Corporation. This family includes variants such as the HFA3046 (NPN), HFA3096 (NPN-PNP combination), and HFA3127 (all NPN). These devices share the same UHF-1 fabrication process and are designed for similar RF applications requiring high-frequency performance and precise transistor matching.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult the official datasheet for pin-compatible alternatives within the HFA3XXX series or verify if other manufacturers offer equivalent specifications for VHF/UHF amplifier and mixer designs.