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The HGT1N30N60A4D is a 600V N-channel IGBT from Fairchild Semiconductor's SMPS Series, housed in a TO-247 package. It combines MOSFET input impedance with bipolar low conduction loss, featuring an integrated anti-parallel hyperfast diode. Key electrical parameters include a collector-emitter voltage of 600V and a continuous collector current of 30A. The device exhibits a typical fall time of 58ns at 125°C and supports 100kHz operation at 390V and 20A. Designed for high-frequency switch mode power supplies, it offers stable on-state voltage drop across temperatures from 25°C to 150°C.
Verify component authenticity through authorized distributors or original manufacturer channels. Confirm RoHS compliance status and check for obsolescence notices as the product line may be discontinued. Ensure datasheet revisions match specific manufacturing batches for accurate parameter validation.
Select this component for designs requiring 600V blocking capability with moderate current handling around 30A. Consider thermal management requirements given the TO-247 package constraints. Evaluate switching speed needs against the 58ns fall time specification for efficiency optimization in high-frequency topologies.
This part belongs to Fairchild's SMPS Series IGBT lineup, designed specifically for power conversion efficiency. It represents a transition technology combining MOS gate drive benefits with bipolar conduction performance. The series targets industrial power supplies and motor drives where reliability and switching speed are critical design factors.
Direct substitutes include HGT1N40N60A4D and HGT1N40N60A4D variants within the same series. Verify pinout compatibility and thermal resistance values when cross-referencing with other manufacturers' 600V IGBT offerings.