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Product Detailed Parameters
- Description：IGBT 600V 24A TO-263AB
- Series：-
- Mfr：Fairchild Semiconductor
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：24 A
- Current - Collector Pulsed (Icm)：96 A
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 15A
- Power - Max：104 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：71 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：32 ns
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263AB
- Grade：-
- Qualification：-
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Overview
The HGT1S12N60C3DS is an N-channel Insulated Gate Bipolar Transistor (IGBT) from the UFS Series, manufactured by Fairchild Semiconductor. It features a built-in anti-parallel ultrafast diode and is housed in a TO-263AB surface-mount package. The device supports a maximum collector-emitter voltage of 600V and a continuous collector current of 24A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.8V at 24A and a gate-emitter threshold voltage ranging from 3V to 5V. The unit operates within a junction temperature range of -40°C to +150°C.
Feature Summary
- Integrated ultrafast recovery diode for efficient commutation
- Rugged design optimized for high-power switching applications
- Low conduction loss characteristics for improved thermal performance
Applications
- High-frequency power supplies
- Motor control inverters
- Uninterruptible power systems (UPS)
Procurement Notes
Verify the manufacturer origin as Fairchild Semiconductor or its successor entity onsemi, noting that acquisition activities may affect branding. Confirm the specific suffix 'DS' corresponds to the tape-and-reel packaging format rather than cut tape or tube variants. Ensure component authenticity through authorized distribution channels to avoid counterfeit risks associated with legacy semiconductor parts.
Selection Notes
Select this component when a 600V rating and 24A continuous current capacity are required in a surface-mount form factor. The integrated ultrafast diode eliminates the need for external freewheeling components, simplifying circuit layout. Consider the TO-263AB package thermal resistance for heat dissipation requirements in dense PCB designs compared to through-hole alternatives.
Part Context
This part belongs to the UFS Series of rugged IGBTs, which combines fast switching capabilities with robust avalanche ratings. The series is designed for medium-power applications requiring high reliability. The HGT1S12N60C3DS represents a specific current variant within this family, offering a balance between conduction losses and switching speed suitable for industrial and consumer electronics.
Replacement Considerations
Direct substitutes include HGTP12N60C3DR and HGTG12N60C3DR from the same product line. Verify pin compatibility and thermal characteristics before substitution. Cross-reference with onsemi datasheets if sourcing from post-acquisition inventory.
