HGT1S3N60C3DS

$0.78

Description：IGBT 600V 6A TO-263AB
Series：-

SKU:59d0321f1829 Category: Single IGBTs Brand: Harris Corporation

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：IGBT 600V 6A TO-263AB
Series：-
Mfr：Harris Corporation
Package：Bulk
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：6:00 AM
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：-
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：TO-263AB
Grade：-
Qualification：-

Download product information

HGT1S3N60C3DS

Overview

The HGT1S3N60C3DS is a 600 V, N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Harris Corporation. It features a maximum continuous collector current of 6 A and is housed in a TO-263AB package. This component is designed for high-efficiency switching applications requiring robust voltage handling capabilities.

Feature Summary

N-channel IGBT configuration
600 V breakdown voltage rating
TO-263AB surface-mount package

Applications

Power supply circuits
Motor control systems
Inverter designs

Procurement Notes

Verify the manufacturer origin carefully, as this part number appears across multiple vendors including Intersil, Renesas, Fairchild, and Rochester Electronics. Confirm that the specific unit matches the original Harris specifications if required for legacy compatibility. Check datasheet revisions to ensure parameter consistency across different production sources.

Selection Notes

Select this component when a 600 V blocking capability and 6 A continuous current are required in a compact surface-mount form factor. The TO-263AB package facilitates thermal management through direct mounting to a heatsink. Ensure gate drive requirements align with standard IGBT logic levels for reliable switching performance.

Part Context

Originally developed by Harris Semiconductor, this device was later integrated into the portfolios of Intersil and subsequently Renesas Electronics following corporate acquisitions. Fairchild Semiconductor also produced equivalent versions under similar naming conventions. The part represents a transition period in power semiconductor manufacturing history.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.