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Product Detailed Parameters
- Description：IGBT 600V 14A TO-262
- Series：-
- Mfr：Harris Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：14 A
- Current - Collector Pulsed (Icm)：56 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 7A
- Power - Max：60 W
- Switching Energy：160µJ (on), 120µJ (off)
- Input Type：Standard
- Gate Charge：30 nC
- Td (on/off) @ 25°C：26ns/130ns
- Test Condition：480V, 7A, 50Ohm, 15V
- Reverse Recovery Time (trr)：21 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
- Supplier Device Package：TO-262 (I2PAK)
- Grade：-
- Qualification：-
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Overview
The HGT1S7N60B3D is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi, formerly Harris Semiconductor. It belongs to the UFS Series and features an integrated ultrafast recovery anti-parallel diode. The device is housed in a TO-263AB (D2PAK) surface-mount package with three terminals. Key electrical specifications include a collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 14 A at 25°C. The maximum power dissipation is rated at 60 W, and it operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Integrated ultrafast recovery anti-parallel diode for efficient commutation
- Rugged IGBT design optimized for high-frequency switching applications
- Surface-mount TO-263AB package suitable for automated assembly
Applications
- High-frequency switch-mode power supplies
- Motor control drives
- DC-DC converters
Procurement Notes
Verify the manufacturer origin carefully, as the component was originally developed by Harris Semiconductor before its semiconductor division was acquired by Intersil and subsequently onsemi. Confirm the specific suffix 'B3D' against the official datasheet to ensure correct pinout and thermal characteristics. Check RoHS compliance status and lead times due to potential end-of-life or obsolescence status associated with legacy Harris part numbers.
Selection Notes
Select this component when a 600V blocking capability and 14A continuous current are required in a surface-mount configuration. The integrated ultrafast diode makes it suitable for hard-switching topologies where reverse recovery performance is critical. Ensure the PCB layout supports the thermal requirements of the TO-263AB package given the 60W dissipation limit.
Part Context
This part is part of the UFS (Ultrafast Switching) series, which combines IGBT technology with fast diodes. The 'HGT' prefix historically denotes Harris Semiconductor products, now managed under the onsemi portfolio. It serves as a discrete solution for medium-power conversion tasks requiring robust switching performance.
Replacement Considerations
Direct replacements may include other 600V 14A IGBTs with integrated ultrafast diodes in TO-263 packages from manufacturers like Infineon or STMicroelectronics. Verify pin compatibility and thermal resistance values before substitution.
