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Product Detailed Parameters
- Description：IGBT 500V 12A IPAK
- Series：-
- Mfr：Harris Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：500 V
- Current - Collector (Ic) (Max)：12:00 AM
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：2.5V @ 10V, 5A
- Power - Max：75 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：13.4 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA
- Supplier Device Package：IPAK
- Grade：-
- Qualification：-
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Overview
The HGTD10N50F1 is an N-channel enhancement-mode insulated gate bipolar transistor (IGBT) manufactured by Harris Corporation. It is designed for high-voltage, low on-dissipation applications such as switching regulators and motor drivers. The device features a maximum collector-emitter voltage of 500V and a continuous collector current of 10A. Key electrical characteristics include a maximum saturation voltage (VCE(ON)) of 2.5V and a fall time (TFALL) of 1.4µs or less. These specifications enable efficient operation directly from low-power integrated circuits.
Feature Summary
- High input impedance allows direct drive from low-power integrated circuits
- Low on-state voltage minimizes conduction losses in power applications
- Fast switching speeds with reduced fall time enhance system efficiency
Applications
- Switching regulators
- Motor drives
- Protective circuits
Procurement Notes
Verify the manufacturer origin carefully, as the HGTD10N50F1 designation was historically associated with Harris Corporation but is also widely distributed by Fairchild Semiconductor and Intersil Corporation. Confirm the specific datasheet version and manufacturer logo to ensure component authenticity and traceability before integration into designs.
Selection Notes
Select this component when designing circuits requiring a 500V blocking capability with a 10A current rating. The 2.5V maximum VCE(ON) makes it suitable for applications prioritizing low conduction loss. Ensure the driving circuit can support the required gate charge for the specified 1.4µs fall time performance.
Part Context
This IGBT belongs to the HGTD series, which includes variants like HGTD10N40F1 and HGTD6N40E1. These devices are typically packaged in standard TO-220 or similar industrial packages suitable for heat sinking. The series is engineered for robust performance in medium-power switching environments.
Replacement Considerations
Direct substitutes include the HGTD10N40F1 for lower voltage requirements or other 10A/500V N-channel IGBTs from manufacturers like Fairchild and Intersil. Verify pinout compatibility and thermal resistance values when cross-referencing with equivalent parts from different production eras.
