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Product Detailed Parameters
- Description：IGBT 600V 7A IPAK
- Series：-
- Mfr：Harris Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：7:00 AM
- Current - Collector Pulsed (Icm)：20 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 3.5A
- Power - Max：33.3 W
- Switching Energy：66µJ (on), 88µJ (off)
- Input Type：Standard
- Gate Charge：21 nC
- Td (on/off) @ 25°C：18ns/105ns
- Test Condition：480V, 3.5A, 82Ohm, 15V
- Reverse Recovery Time (trr)：16 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA
- Supplier Device Package：IPAK
- Grade：-
- Qualification：-
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Overview
The HGTD3N60B3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Harris Corporation. It features a collector-emitter maximum voltage of 600 V and a continuous collector current rating of 7 A at 25°C. The device is housed in an IPAK through-hole package with a power dissipation capability of 33.3 W. It operates within a temperature range from -55°C to +150°C junction temperature, offering high input impedance and low on-state conduction loss typical of MOS-gated devices.
Feature Summary
- Combines MOSFET high input impedance with bipolar transistor low conduction loss
- Integrated hyperfast anti-parallel diode for efficient switching applications
- Robust short-circuit rating for enhanced reliability under fault conditions
Applications
- High-voltage switching circuits
- Motor control systems
- Power supply inverters
Procurement Notes
Verify component authenticity due to historical manufacturer transitions. Confirm package integrity and pin configuration compatibility with existing PCB layouts. Check for RoHS compliance status relative to original production dates. Ensure storage conditions maintain lead quality prior to soldering. Validate datasheet revisions against specific batch requirements.
Selection Notes
Select this component for applications requiring moderate current handling at 600V blocking levels. Consider the IPAK package for through-hole mounting constraints. Evaluate thermal management needs based on 33.3W dissipation limits. Compare switching speed characteristics against system frequency requirements. Assess cost-effectiveness compared to modern equivalents if new designs are permitted.
Part Context
This IGBT belongs to the UFS series of high-voltage switching devices. It represents a legacy product line from Harris Corporation, now often associated with Intersil or Renesas following corporate acquisitions. The technology integrates a specific IGBT die with a complementary hyperfast diode in a single module.
Replacement Considerations
Direct substitutes include HGTG30N60B3D for higher current capacity. HGTP3N60B3R4724 offers similar voltage ratings with different packaging. Verify pinout compatibility before substitution. Review thermal resistance differences between TO-247 and IPAK packages.
