HGTG11N120CN

Overview

The HGTG11N120CN is a Non-Punch Through (NPT) N-channel Insulated Gate Bipolar Transistor manufactured by Fairchild Semiconductor. It features a collector-emitter breakdown voltage of 1200 V and a continuous collector current of 43 A at a case temperature of 25°C. The device integrates the high input impedance of a MOSFET with the low conduction loss characteristics of a bipolar transistor. Key electrical specifications include a typical fall time of 340 ns at a junction temperature of 150°C, 1200 V switching Safe Operating Area capability, and avalanche rating. It is housed in a TO-247 package.

Feature Summary

• Non-Punch Through (NPT) IGBT design combining MOSFET input impedance with bipolar conduction efficiency
• High voltage switching capability with 1200 V Switching SOA
• Low conduction loss for improved system efficiency
• Avalanche rated for robust operation under transient conditions

Applications

• AC and DC motor controls
• Power supplies
• Drivers for solenoids, relays, and contactors

Procurement Notes

Verify manufacturer lineage as Fairchild Semiconductor assets were acquired by onsemi. Confirm that the specific part number corresponds to the original Fairchild datasheet documentation rather than updated onsemi revisions. Ensure component authenticity through authorized distribution channels to avoid counterfeit risks associated with legacy power semiconductors.

Selection Notes

Select this component for moderate frequency high-voltage switching applications where low conduction losses are critical. The 43 A current rating and 1200 V blocking voltage suit industrial power conversion tasks. Consider thermal management requirements given the TO-247 package and ensure gate drive circuits support the specified fall time characteristics for optimal switching performance.

Part Context

This device belongs to the NPT Series N-Channel IGBT family from Fairchild Semiconductor. It represents a MOS-gated high voltage switching technology designed to replace traditional bipolar transistors in applications requiring faster switching speeds and easier drive circuitry while maintaining low on-state voltage drops.

Replacement Considerations

The HGTG11N120CND serves as a related variant featuring an integrated anti-parallel hyperfast diode. Verify pinout compatibility and thermal resistance parameters when substituting with equivalent parts from other manufacturers or updated series within the same product line.