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Product Detailed Parameters
- Description：IGBT 600V 54A TO-247-3
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：54 A
- Current - Collector Pulsed (Icm)：96 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 12A
- Power - Max：167 W
- Switching Energy：55µJ (on), 50µJ (off)
- Input Type：Standard
- Gate Charge：78 nC
- Td (on/off) @ 25°C：17ns/96ns
- Test Condition：390V, 12A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The HGTG12N60A4 is a MOS-gated high voltage N-channel IGBT designed for high-frequency switching applications. It combines the high input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor. The device features a collector-emitter breakdown voltage (BV_CES) of 600 V and a continuous collector current (I_C) of 54 A at 25°C case temperature. It operates within a junction temperature range of -55°C to +150°C, with a total power dissipation of 167 W at 25°C. The typical saturation voltage (V_CE(sat)) is 2.0 V at 12 A and 25°C.
Feature Summary
- Optimized for high-frequency switch mode power supplies operating above 100 kHz
- Low on-state conduction loss with moderate variation between 25°C and 150°C
- Capable of 600 V switching safe operating area (SSOA)
- High input impedance characteristic suitable for fast switching
Applications
- High frequency switch mode power supplies
- Uninterruptible power supplies (UPS)
- Electric welding equipment
Procurement Notes
Verify component authenticity by checking the manufacturer marking against the datasheet specifications. Confirm the package type matches the required TO-247 form factor. Ensure the ordering suffix corresponds to the specific variant intended for the application. Cross-reference the part number with official distributor catalogs to confirm availability status.
Selection Notes
Select this component for designs requiring high voltage isolation and efficient high-frequency operation. Consider the thermal resistance of 0.75°C/W when designing heat sinks. Evaluate the gate charge requirements against the driver capability to ensure optimal switching performance. Verify that the maximum collector current ratings align with the peak load demands of the circuit.
Part Context
This device belongs to the Fairchild Semiconductor SMPS Series N-Channel IGBTs family. It shares characteristics with the HGTP12N60A4 and HGT1S12N60A4S9A variants, differing primarily in packaging configurations such as TO-220AB and TO-263AB. The technology was originally designated as Developmental Type TA49335 before commercial release.
Replacement Considerations
Direct substitutes include HGTP12N60A4 and HGT1S12N60A4S9A from the same product family. Verify pinout compatibility and thermal interface dimensions when replacing components. Check if the alternative package style meets the mechanical constraints of the printed circuit board layout.
